Inventor
STRANG ERIC J
US58 patents
⚠️ This page may combine multiple inventors who share the name “STRANG ERIC J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
42 patentsUS7723648B2May 25, 2010
Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
TOKYO ELECTRON LTD551 citations99
US7166233B2Jan 23, 2007
Pulsed plasma processing method and apparatus
TOKYO ELECTRON LTD301 citations99
US6872259B2Mar 29, 2005
Method of and apparatus for tunable gas injection in a plasma processing system
TOKYO ELECTRON LTD624 citations99
US6740853B1May 25, 2004
Multi-zone resistance heater
TOKYO ELECTRON LTD782 citations99
US7311782B2Dec 25, 2007
Apparatus for active temperature control of susceptors
TOKYO ELECTRON LTD98 citations98
US7164236B2Jan 16, 2007
Method and apparatus for improved plasma processing uniformity
TOKYO ELECTRON LTD66 citations97
US6894769B2May 17, 2005
Monitoring erosion of system components by optical emission
TOKYO ELECTRON LTD60 citations96
US6806949B2Oct 19, 2004
Monitoring material buildup on system components by optical emission
TOKYO ELECTRON LTD64 citations96
US7740704B2Jun 22, 2010
High rate atomic layer deposition apparatus and method of using
TOKYO ELECTRON LTD48 citations94
US8038834B2Oct 18, 2011
Method and system for controlling radical distribution
TOKYO ELECTRON LTD18 citations93
US7718030B2May 18, 2010
Method and system for controlling radical distribution
TOKYO ELECTRON LTD20 citations93
US7666479B2Feb 23, 2010
Apparatus and method of gas injection sequencing
TOKYO ELECTRON LTD42 citations93
US7347901B2Mar 25, 2008
Thermally zoned substrate holder assembly
TOKYO ELECTRON LTD25 citations93
US7217336B2May 15, 2007
Directed gas injection apparatus for semiconductor processing
TOKYO ELECTRON LTD19 citations93
US7103443B2Sep 5, 2006
Directed gas injection apparatus for semiconductor processing
TOKYO ELECTRON LTD20 citations93
US6954077B2Oct 11, 2005
Apparatus and method for improving microwave coupling to a resonant cavity
TOKYO ELECTRON LTD20 citations93
US6949722B2Sep 27, 2005
Method and apparatus for active temperature control of susceptors
TOKYO ELECTRON LTD33 citations93
US6642661B2Nov 4, 2003
Method to affect spatial distribution of harmonic generation in a capacitive discharge reactor
TOKYO ELECTRON LTD28 citations93
US8014991B2Sep 6, 2011
System and method for using first-principles simulation to characterize a semiconductor manufacturing process
TOKYO ELECTRON LTD24 citations92
US7019253B2Mar 28, 2006
Electrically controlled plasma uniformity in a high density plasma source
TOKYO ELECTRON LTD37 citations92
US6887341B2May 3, 2005
Plasma processing apparatus for spatial control of dissociation and ionization
TOKYO ELECTRON LTD25 citations92
US6806653B2Oct 19, 2004
Method and structure to segment RF coupling to silicon electrode
TOKYO ELECTRON LTD33 citations92
US7075031B2Jul 11, 2006
Method of and structure for controlling electrode temperature
TOKYO ELECTRON LTD43 citations89
US8050900B2Nov 1, 2011
System and method for using first-principles simulation to provide virtual sensors that facilitate a semiconductor manufacturing process
TOKYO ELECTRON LTD12 citations84
US8032348B2Oct 4, 2011
System and method for using first-principles simulation to facilitate a semiconductor manufacturing process
TOKYO ELECTRON LTD13 citations84
US7582186B2Sep 1, 2009
Method and apparatus for an improved focus ring in a plasma processing system
TOKYO ELECTRON LTD17 citations84
US8036869B2Oct 11, 2011
System and method for using first-principles simulation to control a semiconductor manufacturing process via a simulation result or a derived empirical model
TOKYO ELECTRON LTD11 citations83
US7461614B2Dec 9, 2008
Method and apparatus for improved baffle plate
TOKYO ELECTRON LTD16 citations83
US6913703B2Jul 5, 2005
Method of adjusting the thickness of an electrode in a plasma processing system
TOKYO ELECTRON LTD14 citations83
US7718032B2May 18, 2010
Dry non-plasma treatment system and method of using
TOKYO ELECTRON LTD8 citations82
US7482757B2Jan 27, 2009
Inductively coupled high-density plasma source
TOKYO ELECTRON LTD13 citations80
US7233878B2Jun 19, 2007
Method and system for monitoring component consumption
TOKYO ELECTRON LTD7 citations74
US7214289B2May 8, 2007
Method and apparatus for wall film monitoring
TOKYO ELECTRON LTD6 citations74
US6674241B2Jan 6, 2004
Plasma processing apparatus and method of controlling chemistry
TOKYO ELECTRON LTD9 citations73
US7544269B2Jun 9, 2009
Method and apparatus for electron density measurement
TOKYO ELECTRON LTD5 citations63
US7384876B2Jun 10, 2008
Method and apparatus for determining consumable lifetime
TOKYO ELECTRON LTD2 citations63
US7353141B2Apr 1, 2008
Method and system for monitoring component consumption
TOKYO ELECTRON LTD3 citations63
US7263447B2Aug 28, 2007
Method and apparatus for electron density measurement and verifying process status
TOKYO ELECTRON LTD3 citations63
US7199328B2Apr 3, 2007
Apparatus and method for plasma processing
TOKYO ELECTRON LTD6 citations63
US11745202B2Sep 5, 2023
Dry non-plasma treatment system
TOKYO ELECTRON LTD0 citations61
US6960887B2Nov 1, 2005
Method and apparatus for tuning a plasma reactor chamber
TOKYO ELECTRON LTD3 citations58
US7177781B2Feb 13, 2007
Method and system for electron density measurement
TOKYO ELECTRON LTD2 citations56
STRANG ERIC J
3 patentsUS8877000B2Nov 4, 2014
Shower head gas injection apparatus with secondary high pressure pulsed gas injection
STRANG ERIC J14 citations83
US8296687B2Oct 23, 2012
System and method for using first-principles simulation to analyze a process performed by a semiconductor processing tool
STRANG ERIC J10 citations82
US8073667B2Dec 6, 2011
System and method for using first-principles simulation to control a semiconductor manufacturing process
STRANG ERIC J12 citations82
LEE ERIC M
2 patentsFINK STEVEN T
2 patentsTSUKAMOTO YUJI
1 patentShowing the top 50 of 58 patents by PatentIndex Score.