Inventor
MAK ALFRED W
US32 patents
⚠️ This page may combine multiple inventors who share the name “MAK ALFRED W”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
30 patentsUS6551929B1Apr 22, 2003
Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
APPLIED MATERIALS INC396 citations99
US7211144B2May 1, 2007
Pulsed nucleation deposition of tungsten layers
APPLIED MATERIALS INC161 citations98
US7128806B2Oct 31, 2006
Mask etch processing apparatus
APPLIED MATERIALS INC131 citations98
US6939804B2Sep 6, 2005
Formation of composite tungsten films
APPLIED MATERIALS INC116 citations98
US6866746B2Mar 15, 2005
Clamshell and small volume chamber with fixed substrate support
APPLIED MATERIALS INC130 citations97
US7709385B2May 4, 2010
Method for depositing tungsten-containing layers by vapor deposition techniques
APPLIED MATERIALS INC33 citations96
US7674715B2Mar 9, 2010
Method for forming tungsten materials during vapor deposition processes
APPLIED MATERIALS INC35 citations96
US7465666B2Dec 16, 2008
Method for forming tungsten materials during vapor deposition processes
APPLIED MATERIALS INC47 citations96
US7465665B2Dec 16, 2008
Method for depositing tungsten-containing layers by vapor deposition techniques
APPLIED MATERIALS INC43 citations96
US7235486B2Jun 26, 2007
Method for forming tungsten materials during vapor deposition processes
APPLIED MATERIALS INC43 citations96
US7175713B2Feb 13, 2007
Apparatus for cyclical deposition of thin films
APPLIED MATERIALS INC110 citations96
US7115494B2Oct 3, 2006
Method and system for controlling the presence of fluorine in refractory metal layers
APPLIED MATERIALS INC30 citations96
US7101795B1Sep 5, 2006
Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
APPLIED MATERIALS INC50 citations96
US7085616B2Aug 1, 2006
Atomic layer deposition apparatus
APPLIED MATERIALS INC42 citations96
US7033922B2Apr 25, 2006
Method and system for controlling the presence of fluorine in refractory metal layers
APPLIED MATERIALS INC30 citations96
US6855368B1Feb 15, 2005
Method and system for controlling the presence of fluorine in refractory metal layers
APPLIED MATERIALS INC58 citations96
US6849545B2Feb 1, 2005
System and method to form a composite film stack utilizing sequential deposition techniques
APPLIED MATERIALS INC54 citations96
US6020270AFeb 1, 2000
Bomine and iodine etch process for silicon and silicides
APPLIED MATERIALS INC47 citations96
US7605083B2Oct 20, 2009
Formation of composite tungsten films
APPLIED MATERIALS INC39 citations95
US7846840B2Dec 7, 2010
Method for forming tungsten materials during vapor deposition processes
APPLIED MATERIALS INC19 citations93
US7695563B2Apr 13, 2010
Pulsed deposition process for tungsten nucleation
APPLIED MATERIALS INC38 citations92
US7384867B2Jun 10, 2008
Formation of composite tungsten films
APPLIED MATERIALS INC16 citations92
US7250309B2Jul 31, 2007
Integrated phase angle and optical critical dimension measurement metrology for feed forward and feedback process control
APPLIED MATERIALS INC39 citations92
US7220673B2May 22, 2007
Method for depositing tungsten-containing layers by vapor deposition techniques
APPLIED MATERIALS INC29 citations92
US8027746B2Sep 27, 2011
Atomic layer deposition apparatus
APPLIED MATERIALS INC4 citations74
US7860597B2Dec 28, 2010
Atomic layer deposition apparatus
APPLIED MATERIALS INC5 citations74
US7660644B2Feb 9, 2010
Atomic layer deposition apparatus
APPLIED MATERIALS INC4 citations74
US9031685B2May 12, 2015
Atomic layer deposition apparatus
APPLIED MATERIALS INC1 citations63
US7879151B2Feb 1, 2011
Mask etch processing apparatus
APPLIED MATERIALS INC2 citations62
US7682984B2Mar 23, 2010
Interferometer endpoint monitoring device
APPLIED MATERIALS INC0 citations51