Inventor
YANG KEVIN J
US21 patents
⚠️ This page may combine multiple inventors who share the name “YANG KEVIN J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
T RAM SEMICONDUCTOR INC
14 patentsUS7078739B1Jul 18, 2006
Thyristor-based memory and its method of operation
T RAM SEMICONDUCTOR INC307 citations99
US7488627B1Feb 10, 2009
Thyristor-based memory and its method of operation
T RAM SEMICONDUCTOR INC35 citations96
US7786505B1Aug 31, 2010
Reduction of charge leakage from a thyristor-based memory cell
T RAM SEMICONDUCTOR INC48 citations94
US7893456B1Feb 22, 2011
Thyristor-based memory and its method of operation
T RAM SEMICONDUCTOR INC28 citations92
US7195959B1Mar 27, 2007
Thyristor-based semiconductor device and method of fabrication
T RAM SEMICONDUCTOR INC50 citations92
US7894256B1Feb 22, 2011
Thyristor based memory cell
T RAM SEMICONDUCTOR INC11 citations84
US7894255B1Feb 22, 2011
Thyristor based memory cell
T RAM SEMICONDUCTOR INC17 citations84
US7491586B2Feb 17, 2009
Semiconductor device with leakage implant and method of fabrication
T RAM SEMICONDUCTOR INC9 citations84
US7381999B1Jun 3, 2008
Workfunction-adjusted thyristor-based memory device
T RAM SEMICONDUCTOR INC12 citations84
US7075122B1Jul 11, 2006
Thyristor device with carbon lifetime adjustment implant and its method of fabrication
T RAM SEMICONDUCTOR INC13 citations84
US7554130B1Jun 30, 2009
Reducing effects of parasitic transistors in thyristor-based memory using an isolation or damage region
T RAM SEMICONDUCTOR INC7 citations74
US7858449B2Dec 28, 2010
Thyristor device with carbon lifetime adjustment implant and its method of fabrication
T RAM SEMICONDUCTOR INC2 citations63
US7488626B1Feb 10, 2009
Thyristor device with carbon lifetime adjustment implant and its method of fabrication
T RAM SEMICONDUCTOR INC3 citations63
US7262443B1Aug 28, 2007
Silicide uniformity for lateral bipolar transistors
T RAM SEMICONDUCTOR INC5 citations62