Inventor
KAO HSUAN LING
TW9 patents
Patents
9 patentsUS7005696B2Feb 28, 2006
Structure of nonvolatile memory array
MACRONIX INT CO LTD12 citations82
US6821841B1Nov 23, 2004
Method for fabricating a mask read-only-memory with diode cells
MACRONIX INT CO LTD14 citations82
US7419868B2Sep 2, 2008
Gated diode nonvolatile memory process
MACRONIX INT CO LTD7 citations73
US7492638B2Feb 17, 2009
Gated diode nonvolatile memory operation
MACRONIX INT CO LTD3 citations62
US7151042B2Dec 19, 2006
Method of improving flash memory performance
MACRONIX INT CO LTD2 citations62
US7768825B2Aug 3, 2010
Gated diode nonvolatile memory structure with diffusion barrier structure
MACRONIX INT CO LTD5 citations61
US6979620B1Dec 27, 2005
Method for fabricating a flash memory cell
MACRONIX INT CO LTD5 citations60
US7723757B2May 25, 2010
Vertical nonvolatile memory cell, array, and operation
MACRONIX INT CO LTD1 citations51
US7244661B2Jul 17, 2007
Method for forming a buried diffusion layer with reducing topography in a surface of a semiconductor substrate
MACRONIX INT CO LTD0 citations39