Inventor
CHUNG SUNG-YONG
US28 patents
⚠️ This page may combine multiple inventors who share the name “CHUNG SUNG-YONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SK HYNIX INC
9 patentsUS9679660B1Jun 13, 2017
Semiconductor memory device and operating method thereof
SK HYNIX INC21 citations93
US11545190B2Jan 3, 2023
Semiconductor memory device
SK HYNIX INC6 citations86
US9589647B1Mar 7, 2017
Semiconductor device with improved programming reliability
SK HYNIX INC10 citations84
US9734913B2Aug 15, 2017
Data storage device and method of driving the same
SK HYNIX INC5 citations68
US12224031B2Feb 11, 2025
Semiconductor memory device
SK HYNIX INC0 citations62
US12148501B2Nov 19, 2024
Semiconductor memory device
SK HYNIX INC0 citations62
US12538493B2Jan 27, 2026
Memory device and method of manufacturing memory device
SK HYNIX INC0 citations61
US10490284B2Nov 26, 2019
Memory device and operating method thereof
SK HYNIX INC1 citations59
US10672480B2Jun 2, 2020
Memory device and operating method thereof
SK HYNIX INC0 citations49
SPANSION LLC
8 patentsUS7679967B2Mar 16, 2010
Controlling AC disturbance while programming
SPANSION LLC10 citations83
US7746698B2Jun 29, 2010
Programming in memory devices using source bitline voltage bias
SPANSION LLC7 citations72
US7659569B2Feb 9, 2010
Work function engineering for FN erase of a memory device with multiple charge storage elements in an undercut region
SPANSION LLC5 citations63
US7626869B2Dec 1, 2009
Multi-phase wordline erasing for flash memory
SPANSION LLC3 citations62
US7986562B2Jul 26, 2011
Controlling AC disturbance while programming
SPANSION LLC2 citations61
US7995386B2Aug 9, 2011
Applying negative gate voltage to wordlines adjacent to wordline associated with read or verify to reduce adjacent wordline disturb
SPANSION LLC2 citations60
US7952938B2May 31, 2011
Selective application of word line bias to minimize fringe effects in electromagnetic fields during erase of nonvolatile memory
SPANSION LLC3 citations60
US7746705B2Jun 29, 2010
Selective application of word line bias to minimize fringe effects in electromagnetic fields during erase of nonvolatile memory
SPANSION LLC4 citations59