Inventor
OH GYU-HWAN
KR24 patents
⚠️ This page may combine multiple inventors who share the name “OH GYU-HWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
OH GYU-HWAN
13 patentsUS8507353B2Aug 13, 2013
Method of forming semiconductor device having self-aligned plug
OH GYU-HWAN38 citations93
US8830739B2Sep 9, 2014
Non-volatile memory device having multi-level cells and method of forming the same
OH GYU-HWAN5 citations83
US8785213B2Jul 22, 2014
Method of fabricating non-volatile memory device having small contact and related devices
OH GYU-HWAN11 citations83
US8237149B2Aug 7, 2012
Non-volatile memory device having bottom electrode
OH GYU-HWAN9 citations83
US8551805B2Oct 8, 2013
Methods of manufacturing phase-change memory devices
OH GYU-HWAN7 citations82
US8884263B2Nov 11, 2014
Non-volatile memory device having conductive buffer pattern and method of fabricating the same
OH GYU-HWAN5 citations72
US8703573B2Apr 22, 2014
Semiconductor device and method of manufacturing the same
OH GYU-HWAN4 citations72
US9196827B2Nov 24, 2015
Non-volatile memory devices having dual heater configurations and methods of fabricating the same
OH GYU-HWAN3 citations62
US8680500B2Mar 25, 2014
Phase change memory devices having buried metal silicide patterns
OH GYU-HWAN3 citations62
US8187918B2May 29, 2012
Methods of forming multi-level cell of semiconductor memory
OH GYU-HWAN5 citations59
US8138490B2Mar 20, 2012
Variable resistance non-volatile memory cells and methods of fabricating same
OH GYU-HWAN1 citations51
US8841643B2Sep 23, 2014
Semiconductor memory device including buffer electrode
OH GYU-HWAN1 citations50
US8133758B2Mar 13, 2012
Method of fabricating phase-change memory device having TiC layer
OH GYU-HWAN0 citations41
SAMSUNG ELECTRONICS CO LTD
7 patentsUS8790976B2Jul 29, 2014
Method of forming semiconductor device having self-aligned plug
SAMSUNG ELECTRONICS CO LTD5 citations83
US7812332B2Oct 12, 2010
Phase change memory device and method of forming the same
SAMSUNG ELECTRONICS CO LTD7 citations72
US10833124B2Nov 10, 2020
Semiconductor devices including data storage patterns
SAMSUNG ELECTRONICS CO LTD1 citations54
US8021977B2Sep 20, 2011
Methods of forming contact structures and semiconductor devices fabricated using contact structures
SAMSUNG ELECTRONICS CO LTD0 citations52
US9130160B2Sep 8, 2015
Non-volatile memory device having multi-level cells and method of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7759159B2Jul 20, 2010
Variable resistance non-volatile memory cells and methods of fabricating same
SAMSUNG ELECTRONICS CO LTD1 citations51
US10692933B2Jun 23, 2020
Variable resistance memory device
SAMSUNG ELECTRONICS CO LTD0 citations48