P

Inventor

LEE CHEON AN

KR12 patents
⚠️ This page may combine multiple inventors who share the name “LEE CHEON AN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

6 patents
US9805807B2Oct 31, 2017

Operation method operating nonvolatile memory device having plurality of memory blocks

SAMSUNG ELECTRONICS CO LTD8 citations83
US8917535B2Dec 23, 2014

Variable resistance memory device and related method of operation

SAMSUNG ELECTRONICS CO LTD15 citations83
US9224462B2Dec 29, 2015

Resistive memory device having defined or variable erase unit size

SAMSUNG ELECTRONICS CO LTD6 citations72
US10395727B2Aug 27, 2019

Nonvolatile method device and sensing method of the same

SAMSUNG ELECTRONICS CO LTD4 citations70
US9190143B2Nov 17, 2015

Variable resistance memory device and related method of operation

SAMSUNG ELECTRONICS CO LTD2 citations62
US12580022B2Mar 17, 2026

Block selection circuit controlling series—connected pass transistors using shared switch circuit and flash memory including the same

SAMSUNG ELECTRONICS CO LTD0 citations49

LEE CHEON AN

2 patents
US8755242B2Jun 17, 2014

High voltage generating circuit and method of operating the same

LEE CHEON AN19 citations82
US8194484B2Jun 5, 2012

Circuit precharging DRAM bit line

LEE CHEON AN3 citations61

KWAK DONGHUN

1 patent
US9093157B2Jul 28, 2015

Nonvolatile memory device and related method of programming

KWAK DONGHUN14 citations83

SAMSUNG SEMICONDUCTOR CO LTD

1 patent
US8929124B2Jan 6, 2015

Resistive memory device and related method of operation

SAMSUNG SEMICONDUCTOR CO LTD17 citations82

LEE CHEON-AN

1 patent
US8258856B2Sep 4, 2012

Antifuse circuit having protection circuit

LEE CHEON-AN3 citations61

LEE CHANG HYUN

1 patent
US8729615B2May 20, 2014

Non-volatile memory device with high speed operation and lower power consumption

LEE CHANG HYUN1 citations52