Inventor
MAAT STEFAN
US87 patents
⚠️ This page may combine multiple inventors who share the name “MAAT STEFAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI GLOBAL STORAGE TECH
30 patentsUS7372116B2May 13, 2008
Heat assisted switching in an MRAM cell utilizing the antiferromagnetic to ferromagnetic transition in FeRh
HITACHI GLOBAL STORAGE TECH59 citations98
US7791844B2Sep 7, 2010
Magnetoresistive sensor having a magnetically stable free layer with a positive magnetostriction
HITACHI GLOBAL STORAGE TECH49 citations94
US6940691B2Sep 6, 2005
Electrically resistive heating device for data storage systems
HITACHI GLOBAL STORAGE TECH16 citations93
US7551409B2Jun 23, 2009
Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with improved ferromagnetic free layer structure
HITACHI GLOBAL STORAGE TECH22 citations92
US7382573B2Jun 3, 2008
Magnetic write head having a magnetically anisotropic write pole
HITACHI GLOBAL STORAGE TECH11 citations92
US7382586B2Jun 3, 2008
Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a self biased free layer
HITACHI GLOBAL STORAGE TECH22 citations92
US7298597B2Nov 20, 2007
Magnetoresistive sensor based on spin accumulation effect with free layer stabilized by in-stack orthogonal magnetic coupling
HITACHI GLOBAL STORAGE TECH35 citations92
US7295406B2Nov 13, 2007
Narrow track extraordinary magneto resistive [EMR] device
HITACHI GLOBAL STORAGE TECH16 citations92
US7199984B2Apr 3, 2007
Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized by in-stack orthogonal magnetic coupling
HITACHI GLOBAL STORAGE TECH16 citations92
US6977801B2Dec 20, 2005
Magnetoresistive device with exchange-coupled structure having half-metallic ferromagnetic Heusler alloy in the pinned layer
HITACHI GLOBAL STORAGE TECH32 citations92
US6836392B2Dec 28, 2004
Stability-enhancing underlayer for exchange-coupled magnetic structures, magnetoresistive sensors, and magnetic disk drive systems
HITACHI GLOBAL STORAGE TECH24 citations91
US7672090B2Mar 2, 2010
Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer
HITACHI GLOBAL STORAGE TECH8 citations84
US7633718B2Dec 15, 2009
Lead contact structure for EMR elements
HITACHI GLOBAL STORAGE TECH8 citations84
US7558028B2Jul 7, 2009
Magnetic head with improved CPP sensor using Heusler alloys
HITACHI GLOBAL STORAGE TECH13 citations84
US7502206B2Mar 10, 2009
Multiple extraordinary magnetoresistive (EMR) sensor utilizing both current leads
HITACHI GLOBAL STORAGE TECH10 citations84
US7460343B2Dec 2, 2008
Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer
HITACHI GLOBAL STORAGE TECH12 citations84
US7446986B2Nov 4, 2008
Magnetic tunnel junction with in stack biasing layer providing orthogonal exchange coupling
HITACHI GLOBAL STORAGE TECH11 citations84
US7436634B2Oct 14, 2008
Magnetically anisotropic shield for use in magnetic data recording
HITACHI GLOBAL STORAGE TECH9 citations84
US7363699B2Apr 29, 2008
Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers
HITACHI GLOBAL STORAGE TECH14 citations84
US7167346B2Jan 23, 2007
Extraordinary magnetoresistance sensor with perpendicular magnetic biasing by an antiferromagnetic/ferromagnetic exchange-coupled structure
HITACHI GLOBAL STORAGE TECH11 citations84
US7106561B2Sep 12, 2006
Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized by in-stack orthogonal magnetic coupling to an antiparallel pinned biasing layer
HITACHI GLOBAL STORAGE TECH13 citations84
US7057862B2Jun 6, 2006
Current-perpendicular-to-plane-magnetoresistive sensor with free layer stabilized against vortex magnetic domains generated by the sense current
HITACHI GLOBAL STORAGE TECH13 citations84
US7203036B2Apr 10, 2007
Planar extraordinary magnetoresistance sensor
HITACHI GLOBAL STORAGE TECH19 citations83
US7615771B2Nov 10, 2009
Memory array having memory cells formed from metallic material
HITACHI GLOBAL STORAGE TECH7 citations74
US7529066B2May 5, 2009
Magnetoresistive sensor having magnetic layers with tailored magnetic anisotropy induced by direct ion milling
HITACHI GLOBAL STORAGE TECH6 citations74
US7466515B2Dec 16, 2008
Magnetic medium having a soft underlayer with a magnetic anisotropy
HITACHI GLOBAL STORAGE TECH6 citations74
US7457085B2Nov 25, 2008
Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers
HITACHI GLOBAL STORAGE TECH7 citations74
US7423847B2Sep 9, 2008
Current-perpendicular-to-the-plane spin-valve (CPP-SV) sensor with current-confining apertures concentrated near the sensing edge
HITACHI GLOBAL STORAGE TECH7 citations74
US7360300B2Apr 22, 2008
Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer
HITACHI GLOBAL STORAGE TECH8 citations74
US7360299B2Apr 22, 2008
Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer
HITACHI GLOBAL STORAGE TECH8 citations74
HGST Netherlands BV
10 patentsUS9042059B1May 26, 2015
Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor structure with multiple stacked sensors and improved center shield
HGST Netherlands BV46 citations94
US8873204B1Oct 28, 2014
Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor structure with multiple stacked sensors and center shield with CoFeB insertion layer
HGST Netherlands BV44 citations94
US8749926B1Jun 10, 2014
Scissor magnetic read head with wrap-around magnetic shield
HGST Netherlands BV36 citations94
US8576518B1Nov 5, 2013
Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with exchange-coupled side shield structure
HGST Netherlands BV54 citations94
US8780506B1Jul 15, 2014
Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with side shields and an antiparallel structure top shield
HGST Netherlands BV28 citations93
US8638530B1Jan 28, 2014
Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor having a top shield with an antiparallel structure
HGST Netherlands BV42 citations93
US8670218B1Mar 11, 2014
Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with hard magnet biasing structure having a MgO insulating layer
HGST Netherlands BV9 citations84
US8385026B2Feb 26, 2013
Tunneling magnetoresistive (TMR) read head with low magnetic noise
HGST Netherlands BV8 citations84
US9570100B1Feb 14, 2017
Two-dimensional magnetic recording device with center shield stabilized by recessed AFM layer
HGST Netherlands BV10 citations83
US8861137B1Oct 14, 2014
Perpendicular magnetic recording write head with main pole formed on a metallic amorphous underlayer
HGST Netherlands BV15 citations83
IBM
3 patentsUS6653704B1Nov 25, 2003
Magnetic memory with tunnel junction memory cells and phase transition material for controlling current to the cells
IBM97 citations98
US6834026B2Dec 21, 2004
Method for thermally-assisted recording on a magnetic recording disk
IBM67 citations96
US6650513B2Nov 18, 2003
Magnetic devices with a ferromagnetic layer having perpendicular magnetic anisotropy and an antiferromagnetic layer for perpendicularly exchange biasing the ferromagnetic layer
IBM72 citations96
CAREY MATTHEW J
2 patentsZELTSER ALEXANDER M
2 patentsUS8320078B1Nov 27, 2012
Perpendicular magnetic recording write head with antiparallel-coupled laminated main pole having a tapered trailing edge
ZELTSER ALEXANDER M11 citations83
US8218270B1Jul 10, 2012
Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with improved hard magnet biasing structure
ZELTSER ALEXANDER M17 citations83
HITACHI GLOBAL STORAGE TECH NL
1 patentFRANCA-NETO LUIZ M
1 patentMAAT STEFAN
1 patentShowing the top 50 of 87 patents by PatentIndex Score.