Inventor
HU CHIA-HSIN
TW30 patents
⚠️ This page may combine multiple inventors who share the name “HU CHIA-HSIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
19 patentsUS9812444B2Nov 7, 2017
Fin-type resistor
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations82
US10163899B2Dec 25, 2018
Temperature compensation circuits
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9875942B2Jan 23, 2018
Guard rings including semiconductor fins and regrown regions
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9679992B2Jun 13, 2017
FinFET device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9166067B2Oct 20, 2015
Device layout for reference and sensor circuits
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US10998443B2May 4, 2021
Epi block structure in semiconductor product providing high breakdown voltage
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10170414B2Jan 1, 2019
Semiconductor device and a method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US9865592B2Jan 9, 2018
Method for FinFET integrated with capacitor
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9419087B2Aug 16, 2016
Bipolar junction transistor formed on fin structures
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US11621351B2Apr 4, 2023
Epi block structure in semiconductor product providing high breakdown voltage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11244944B2Feb 8, 2022
Temperature compensation circuits
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12033937B2Jul 9, 2024
Semiconductor device and a method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US9773731B2Sep 26, 2017
Semiconductor device and a method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10340194B2Jul 2, 2019
Guard rings including semiconductor fins and regrown regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9780003B2Oct 3, 2017
Bipolar junction transistor formed on fin structures
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9514989B2Dec 6, 2016
Guard rings including semiconductor fins and regrown region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10840181B2Nov 17, 2020
Semiconductor device and a method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9755075B2Sep 5, 2017
High efficiency FinFET diode
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9691758B1Jun 27, 2017
Fin-type resistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
TAIWAN SEMICONDUCTOR MFG
8 patentsUS9076869B1Jul 7, 2015
FinFET device and method
TAIWAN SEMICONDUCTOR MFG20 citations92
US8723225B2May 13, 2014
Guard rings on fin structures
TAIWAN SEMICONDUCTOR MFG15 citations92
US9305918B2Apr 5, 2016
Method for FinFET integrated with capacitor
TAIWAN SEMICONDUCTOR MFG6 citations84
US8946038B2Feb 3, 2015
Diode structures using fin field effect transistor processing and method of forming the same
TAIWAN SEMICONDUCTOR MFG14 citations84
US9093566B2Jul 28, 2015
High efficiency FinFET diode
TAIWAN SEMICONDUCTOR MFG5 citations83
US9053947B2Jun 9, 2015
Methods for forming guard rings on fin structures
TAIWAN SEMICONDUCTOR MFG3 citations63
US9293378B2Mar 22, 2016
High efficiency FinFET diode
TAIWAN SEMICONDUCTOR MFG1 citations62
US9281399B2Mar 8, 2016
FinFET with high breakdown voltage characteristics
TAIWAN SEMICONDUCTOR MFG0 citations52