Inventor
LEE KWAN HEUM
KR38 patents
⚠️ This page may combine multiple inventors who share the name “LEE KWAN HEUM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
29 patentsUS10297601B2May 21, 2019
Semiconductor devices with layers commonly contacting fins and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD19 citations94
US10079305B2Sep 18, 2018
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD25 citations94
US9761719B2Sep 12, 2017
Semiconductor device having silicon-germanium source/drain regions with varying germanium concentrations
SAMSUNG ELECTRONICS CO LTD19 citations92
US9502532B2Nov 22, 2016
Methods of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD9 citations83
US10304932B2May 28, 2019
Semiconductor device having a fin structure and a manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD8 citations81
US10062754B2Aug 28, 2018
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US9735158B2Aug 15, 2017
Semiconductor devices having bridge layer and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US9412731B2Aug 9, 2016
Semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations73
US9275995B2Mar 1, 2016
Semiconductor devices having composite spacers containing different dielectric materials
SAMSUNG ELECTRONICS CO LTD6 citations73
US10008600B2Jun 26, 2018
Semiconductor device having silicon-germanium source/drain regions with varying germanium concentrations
SAMSUNG ELECTRONICS CO LTD3 citations72
US9881838B2Jan 30, 2018
Semiconductor devices having multiple gate structures and methods of manufacturing such devices
SAMSUNG ELECTRONICS CO LTD5 citations72
US11705503B2Jul 18, 2023
Semiconductor device including non-sacrificial gate spacers and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations71
US9252244B2Feb 2, 2016
Methods of selectively growing source/drain regions of fin field effect transistor and method of manufacturing semiconductor device including a fin field effect transistor
SAMSUNG ELECTRONICS CO LTD4 citations70
US12581634B2Mar 17, 2026
Semiconductor devices incorporating semiconductor layer configurations and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11469237B2Oct 11, 2022
Semiconductor devices with layers commonly contacting fins and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US9530870B2Dec 27, 2016
Methods of fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations61
US12211941B2Jan 28, 2025
Semiconductor device with channel pattern formed of stacked semiconductor regions and gate electrode parts
SAMSUNG ELECTRONICS CO LTD1 citations53
US10319859B2Jun 11, 2019
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US10147723B2Dec 4, 2018
Semiconductor devices having bridge layer and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9853160B2Dec 26, 2017
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9755076B2Sep 5, 2017
Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations52
US9553192B2Jan 24, 2017
Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations52
US8361860B2Jan 29, 2013
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations52
US10629604B2Apr 21, 2020
Method of manufacturing semiconductor device having stressor
SAMSUNG ELECTRONICS CO LTD0 citations51
US10304840B2May 28, 2019
Semiconductor device having stressor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US10790361B2Sep 29, 2020
Semiconductor device having a fin structure and a manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD0 citations49
US9698244B2Jul 4, 2017
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations49
US12349404B2Jul 1, 2025
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations43
US11476327B2Oct 18, 2022
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations41
KIM JIN-BUM
3 patentsUS8877583B2Nov 4, 2014
Method of manufacturing a semiconductor device
KIM JIN-BUM1 citations52
US8409947B2Apr 2, 2013
Method of manufacturing semiconductor device having stress creating layer
KIM JIN-BUM1 citations51
US8716093B2May 6, 2014
Methods of manufacturing a semiconductor device
KIM JIN-BUM0 citations41
KIM SEOK-HOON
2 patentsUS9397219B2Jul 19, 2016
Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices
KIM SEOK-HOON8 citations83
US9368495B2Jun 14, 2016
Semiconductor devices having bridge layer and methods of manufacturing the same
KIM SEOK-HOON6 citations83