Inventor
ALSHAREEF HUSAM N
US28 patents
⚠️ This page may combine multiple inventors who share the name “ALSHAREEF HUSAM N”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEXAS INSTRUMENTS INC
21 patentsUS6730566B2May 4, 2004
Method for non-thermally nitrided gate formation for high voltage devices
TEXAS INSTRUMENTS INC74 citations98
US7226826B2Jun 5, 2007
Semiconductor device having multiple work functions and method of manufacture therefor
TEXAS INSTRUMENTS INC14 citations84
US7906441B2Mar 15, 2011
System and method for mitigating oxide growth in a gate dielectric
TEXAS INSTRUMENTS INC6 citations74
US6921703B2Jul 26, 2005
System and method for mitigating oxide growth in a gate dielectric
TEXAS INSTRUMENTS INC10 citations74
US7049242B2May 23, 2006
Post high voltage gate dielectric pattern plasma surface treatment
TEXAS INSTRUMENTS INC6 citations73
US7018925B2Mar 28, 2006
Post high voltage gate oxide pattern high-vacuum outgas surface treatment
TEXAS INSTRUMENTS INC6 citations73
US7345001B2Mar 18, 2008
Gate dielectric having a flat nitrogen profile and method of manufacture therefor
TEXAS INSTRUMENTS INC2 citations63
US7514308B2Apr 7, 2009
CMOS device having different amounts of nitrogen in the NMOS gate dielectric layers and PMOS gate dielectric layers
TEXAS INSTRUMENTS INC2 citations62
US7339240B2Mar 4, 2008
Dual-gate integrated circuit semiconductor device
TEXAS INSTRUMENTS INC2 citations62
US6924239B2Aug 2, 2005
Method for removal of hydrocarbon contamination on gate oxide prior to non-thermal nitridation using “spike” radical oxidation
TEXAS INSTRUMENTS INC2 citations62
US7682988B2Mar 23, 2010
Thermal treatment of nitrided oxide to improve negative bias thermal instability
TEXAS INSTRUMENTS INC2 citations59
US10068771B2Sep 4, 2018
System and method for mitigating oxide growth in a gate dielectric
TEXAS INSTRUMENTS INC0 citations52
US9892927B2Feb 13, 2018
System and method for mitigating oxide growth in a gate dielectric
TEXAS INSTRUMENTS INC0 citations52
US9779946B2Oct 3, 2017
System and method for mitigating oxide growth in a gate dielectric
TEXAS INSTRUMENTS INC0 citations52
US9576804B2Feb 21, 2017
System and method for mitigating oxide growth in a gate dielectric
TEXAS INSTRUMENTS INC0 citations52
US9396951B2Jul 19, 2016
System and method for mitigating oxide growth in a gate dielectric
TEXAS INSTRUMENTS INC0 citations52
US9368355B2Jun 14, 2016
System and method for mitigating oxide growth in a gate dielectric
TEXAS INSTRUMENTS INC0 citations52
US9337046B1May 10, 2016
System and method for mitigating oxide growth in a gate dielectric
TEXAS INSTRUMENTS INC0 citations52
US9337044B2May 10, 2016
System and method for mitigating oxide growth in a gate dielectric
TEXAS INSTRUMENTS INC0 citations52
US8802519B2Aug 12, 2014
Work function adjustment with the implant of lanthanides
TEXAS INSTRUMENTS INC0 citations51
US7402524B2Jul 22, 2008
Post high voltage gate oxide pattern high-vacuum outgas surface treatment
TEXAS INSTRUMENTS INC0 citations51
SAUDI BASIC IND CORP
3 patentsUS10096352B2Oct 9, 2018
Ferroelectric capacitor with improved fatigue and breakdown properties
SAUDI BASIC IND CORP1 citations48
US8878341B2Nov 4, 2014
Graphene-based composite materials, method of manufacture and applications thereof
SAUDI BASIC IND CORP1 citations44
US8994014B2Mar 31, 2015
Ferroelectric devices, interconnects, and methods of manufacture thereof
SAUDI BASIC IND CORP0 citations42
SABIC GLOBAL TECHNOLOGIES BV
2 patentsUS10068630B2Sep 4, 2018
Non-volatile ferroelectric memory cells with multilevel operation
SABIC GLOBAL TECHNOLOGIES BV6 citations70
US9543322B2Jan 10, 2017
Methods for producing a thin film ferroelectric device using a two-step temperature process on an organic polymeric ferroelectric precursor material stacked between two conductive materials
SABIC GLOBAL TECHNOLOGIES BV6 citations70