P

Inventor

VISOKAY MARK R

US61 patents
⚠️ This page may combine multiple inventors who share the name “VISOKAY MARK R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TEXAS INSTRUMENTS INC

42 patents
US6835639B2Dec 28, 2004

Multiple work function gates

TEXAS INSTRUMENTS INC130 citations99
US6544906B2Apr 8, 2003

Annealing of high-k dielectric materials

TEXAS INSTRUMENTS INC602 citations99
US7229873B2Jun 12, 2007

Process for manufacturing dual work function metal gates in a microelectronics device

TEXAS INSTRUMENTS INC71 citations98
US7105891B2Sep 12, 2006

Gate structure and method

TEXAS INSTRUMENTS INC69 citations98
US7018902B2Mar 28, 2006

Gate dielectric and method

TEXAS INSTRUMENTS INC78 citations98
US6852645B2Feb 8, 2005

High temperature interface layer growth for high-k gate dielectric

TEXAS INSTRUMENTS INC130 citations98
US6821873B2Nov 23, 2004

Anneal sequence for high-κ film property optimization

TEXAS INSTRUMENTS INC106 citations98
US5972722AOct 26, 1999

Adhesion promoting sacrificial etch stop layer in advanced capacitor structures

TEXAS INSTRUMENTS INC107 citations98
US6809370B1Oct 26, 2004

High-k gate dielectric with uniform nitrogen profile and methods for making the same

TEXAS INSTRUMENTS INC81 citations97
US6090697AJul 18, 2000

Etchstop for integrated circuits

TEXAS INSTRUMENTS INC117 citations97
US7135361B2Nov 14, 2006

Method for fabricating transistor gate structures and gate dielectrics thereof

TEXAS INSTRUMENTS INC62 citations96
US6770521B2Aug 3, 2004

Method of making multiple work function gates by implanting metals with metallic alloying additives

TEXAS INSTRUMENTS INC63 citations96
US6211034B1Apr 3, 2001

Metal patterning with adhesive hardmask layer

TEXAS INSTRUMENTS INC55 citations96
US7528024B2May 5, 2009

Dual work function metal gate integration in semiconductor devices

TEXAS INSTRUMENTS INC21 citations93
US7098516B2Aug 29, 2006

Refractory metal-based electrodes for work function setting in semiconductor devices

TEXAS INSTRUMENTS INC14 citations93
US6797599B2Sep 28, 2004

Gate structure and method

TEXAS INSTRUMENTS INC20 citations93
US6642094B2Nov 4, 2003

Complementary transistors having respective gates formed from a metal and a corresponding metal-silicide

TEXAS INSTRUMENTS INC26 citations93
US6600183B1Jul 29, 2003

Integrated circuit capacitor and memory

TEXAS INSTRUMENTS INC46 citations92
US6159835ADec 12, 2000

Encapsulated low resistance gate structure and method for forming same

TEXAS INSTRUMENTS INC30 citations92
US7115530B2Oct 3, 2006

Top surface roughness reduction of high-k dielectric materials using plasma based processes

TEXAS INSTRUMENTS INC40 citations91
US6326293B1Dec 4, 2001

Formation of recessed polysilicon plugs using chemical-mechanical-polishing (CMP) and selective oxidation

TEXAS INSTRUMENTS INC24 citations89
US8021990B2Sep 20, 2011

Gate structure and method

TEXAS INSTRUMENTS INC11 citations84
US7535066B2May 19, 2009

Gate structure and method

TEXAS INSTRUMENTS INC9 citations84
US7253049B2Aug 7, 2007

Method for fabricating dual work function metal gates

TEXAS INSTRUMENTS INC19 citations84
US7226826B2Jun 5, 2007

Semiconductor device having multiple work functions and method of manufacture therefor

TEXAS INSTRUMENTS INC14 citations84
US7067434B2Jun 27, 2006

Hydrogen free integration of high-k gate dielectrics

TEXAS INSTRUMENTS INC16 citations84
US6893924B2May 17, 2005

Dual metal-alloy nitride gate electrodes

TEXAS INSTRUMENTS INC12 citations84
US7338865B2Mar 4, 2008

Method for manufacturing dual work function gate electrodes through local thickness-limited silicidation

TEXAS INSTRUMENTS INC12 citations82
US7291890B2Nov 6, 2007

Gate dielectric and method

TEXAS INSTRUMENTS INC9 citations74
US7109077B2Sep 19, 2006

Dual work function gate electrodes using doped polysilicon and a metal silicon germanium compound

TEXAS INSTRUMENTS INC7 citations74
US6969644B1Nov 29, 2005

Versatile system for triple-gated transistors with engineered corners

TEXAS INSTRUMENTS INC7 citations74
US6809394B1Oct 26, 2004

Dual metal-alloy nitride gate electrodes

TEXAS INSTRUMENTS INC10 citations74
US6794252B2Sep 21, 2004

Method and system for forming dual work function gate electrodes in a semiconductor device

TEXAS INSTRUMENTS INC10 citations74
US6783997B2Aug 31, 2004

Gate structure and method

TEXAS INSTRUMENTS INC12 citations74
US7767511B2Aug 3, 2010

Semiconductor device manufactured using a method to improve gate doping while maintaining good gate profile

TEXAS INSTRUMENTS INC4 citations63
US7709349B2May 4, 2010

Semiconductor device manufactured using a gate silicidation involving a disposable chemical/mechanical polishing stop layer

TEXAS INSTRUMENTS INC2 citations63
US7547596B2Jun 16, 2009

Method of enhancing drive current in a transistor

TEXAS INSTRUMENTS INC4 citations63
US7351626B2Apr 1, 2008

Method for controlling defects in gate dielectrics

TEXAS INSTRUMENTS INC4 citations63
US7321154B2Jan 22, 2008

Refractory metal-based electrodes for work function setting in semiconductor devices

TEXAS INSTRUMENTS INC2 citations63
US7233035B2Jun 19, 2007

Dual work function gate electrodes using doped polysilicon and a metal silicon germanium compound

TEXAS INSTRUMENTS INC3 citations63
US7183221B2Feb 27, 2007

Method of fabricating a semiconductor having dual gate electrodes using a composition-altered metal layer

TEXAS INSTRUMENTS INC2 citations63
US7163880B2Jan 16, 2007

Gate stack and gate stack etch sequence for metal gate integration

TEXAS INSTRUMENTS INC2 citations63

MICRON TECHNOLOGY INC

4 patents

TRUSTEES OF THE STANFORD LELAN

1 patent

UNIV LELAND STANFORD JUNIOR

1 patent

IBM

1 patent

LI ZHENGWEN

1 patent

Showing the top 50 of 61 patents by PatentIndex Score.