Inventor
LIN WEN-KAI
TW30 patents
⚠️ This page may combine multiple inventors who share the name “LIN WEN-KAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
21 patentsUS11923432B2Mar 5, 2024
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US11664441B2May 30, 2023
Nanosheet field-effect transistor device and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US11444177B2Sep 13, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10833170B2Nov 10, 2020
Low-k gate spacer and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10490650B2Nov 26, 2019
Low-k gate spacer and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11217679B2Jan 4, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12426335B2Sep 23, 2025
Reducing k values of dielectric films through anneal
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12363979B2Jul 15, 2025
Nanosheet field-effect transistor device including multi-layer spacer film and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12249639B2Mar 11, 2025
Semiconductor device including multiple inner spacers with different etch rates and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12206012B2Jan 21, 2025
Reducing K values of dielectric films through anneal
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12142668B2Nov 12, 2024
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12009407B2Jun 11, 2024
Nanosheet field-effect transistor device and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11901439B2Feb 13, 2024
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11855182B2Dec 26, 2023
Low-k gate spacer and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11682711B2Jun 20, 2023
Semiconductor device having multi-layered gate spacers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12324208B2Jun 3, 2025
Method for manufacturing semiconductor device including annealing treatment of inner spacer layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11545559B2Jan 3, 2023
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12040382B2Jul 16, 2024
Method of forming a nano-FET semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12550402B2Feb 10, 2026
Nanostructure field-effect transistor device and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12080775B2Sep 3, 2024
Semiconductor device and forming method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12543343B2Feb 3, 2026
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
UNITED MICROELECTRONICS CORP
6 patentsUS10256155B1Apr 9, 2019
Method for fabricating single diffusion break structure directly under a gate line
UNITED MICROELECTRONICS CORP16 citations85
US11854632B2Dec 26, 2023
Semiconductor memory structure and fabrication method thereof
UNITED MICROELECTRONICS CORP2 citations72
US12500115B2Dec 16, 2025
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations62
US10247774B2Apr 2, 2019
Test key structure and method of measuring resistance of vias
UNITED MICROELECTRONICS CORP1 citations60
US10529707B2Jan 7, 2020
Intra-metal capacitor and method of forming the same
UNITED MICROELECTRONICS CORP0 citations49
US10002864B1Jun 19, 2018
Intra-metal capacitor and method of forming the same
UNITED MICROELECTRONICS CORP0 citations49