P

Inventor

LIN WEN-KAI

TW30 patents
⚠️ This page may combine multiple inventors who share the name “LIN WEN-KAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

21 patents
US11923432B2Mar 5, 2024

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US11664441B2May 30, 2023

Nanosheet field-effect transistor device and method of forming

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US11444177B2Sep 13, 2022

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10833170B2Nov 10, 2020

Low-k gate spacer and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10490650B2Nov 26, 2019

Low-k gate spacer and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11217679B2Jan 4, 2022

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12426335B2Sep 23, 2025

Reducing k values of dielectric films through anneal

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12363979B2Jul 15, 2025

Nanosheet field-effect transistor device including multi-layer spacer film and method of forming

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12249639B2Mar 11, 2025

Semiconductor device including multiple inner spacers with different etch rates and method of making

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12206012B2Jan 21, 2025

Reducing K values of dielectric films through anneal

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12142668B2Nov 12, 2024

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12009407B2Jun 11, 2024

Nanosheet field-effect transistor device and method of forming

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11901439B2Feb 13, 2024

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11855182B2Dec 26, 2023

Low-k gate spacer and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11682711B2Jun 20, 2023

Semiconductor device having multi-layered gate spacers

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12324208B2Jun 3, 2025

Method for manufacturing semiconductor device including annealing treatment of inner spacer layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11545559B2Jan 3, 2023

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12040382B2Jul 16, 2024

Method of forming a nano-FET semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12550402B2Feb 10, 2026

Nanostructure field-effect transistor device and method of forming

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12080775B2Sep 3, 2024

Semiconductor device and forming method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12543343B2Feb 3, 2026

Semiconductor structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50

UNITED MICROELECTRONICS CORP

6 patents

UNIV NAT CENTRAL

2 patents

ZIONTECH PTE LTD

1 patent