Inventor
YU JENGYI
US37 patents
⚠️ This page may combine multiple inventors who share the name “YU JENGYI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LAM RES CORP
30 patentsUS12105422B2Oct 1, 2024
Photoresist development with halide chemistries
LAM RES CORP13 citations94
US11322351B2May 3, 2022
Tin oxide films in semiconductor device manufacturing
LAM RES CORP15 citations94
US11257674B2Feb 22, 2022
Eliminating yield impact of stochastics in lithography
LAM RES CORP15 citations94
US10796912B2Oct 6, 2020
Eliminating yield impact of stochastics in lithography
LAM RES CORP18 citations94
US10546748B2Jan 28, 2020
Tin oxide films in semiconductor device manufacturing
LAM RES CORP25 citations94
US10269566B2Apr 23, 2019
Etching substrates using ale and selective deposition
LAM RES CORP15 citations94
US11988965B2May 21, 2024
Underlayer for photoresist adhesion and dose reduction
LAM RES CORP13 citations93
US11551938B2Jan 10, 2023
Alternating etch and passivation process
LAM RES CORP13 citations93
US11314168B2Apr 26, 2022
Underlayer for photoresist adhesion and dose reduction
LAM RES CORP24 citations93
US9837312B1Dec 5, 2017
Atomic layer etching for enhanced bottom-up feature fill
LAM RES CORP48 citations93
US12094711B2Sep 17, 2024
Tin oxide films in semiconductor device manufacturing
LAM RES CORP5 citations86
US12278125B2Apr 15, 2025
Integrated dry processes for patterning radiation photoresist patterning
LAM RES CORP8 citations85
US11355353B2Jun 7, 2022
Tin oxide mandrels in patterning
LAM RES CORP15 citations85
US12183604B2Dec 31, 2024
Integrated dry processes for patterning radiation photoresist patterning
LAM RES CORP9 citations84
US11848212B2Dec 19, 2023
Alternating etch and passivation process
LAM RES CORP10 citations84
US10685836B2Jun 16, 2020
Etching substrates using ALE and selective deposition
LAM RES CORP10 citations84
US12437995B2Oct 7, 2025
Tin oxide films in semiconductor device manufacturing
LAM RES CORP1 citations75
US12417916B2Sep 16, 2025
Tin oxide films in semiconductor device manufacturing
LAM RES CORP1 citations75
US12510826B2Dec 30, 2025
Photoresist development with halide chemistries
LAM RES CORP2 citations74
US12510825B2Dec 30, 2025
Photoresist development with halide chemistries
LAM RES CORP2 citations74
US12474638B2Nov 18, 2025
Underlayer for photoresist adhesion and dose reduction
LAM RES CORP2 citations74
US12183589B2Dec 31, 2024
Tin oxide mandrels in patterning
LAM RES CORP3 citations74
US12293919B2May 6, 2025
Alternating etch and passivation process
LAM RES CORP3 citations73
US12062538B2Aug 13, 2024
Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
LAM RES CORP3 citations73
US12315727B2May 27, 2025
Eliminating yield impact of stochastics in lithography
LAM RES CORP0 citations62
US12417902B2Sep 16, 2025
Method for cleaning a chamber
LAM RES CORP0 citations61
US12027375B2Jul 2, 2024
Selective etch using a sacrificial mask
LAM RES CORP1 citations60
US12191125B2Jan 7, 2025
Removing metal contamination from surfaces of a processing chamber
LAM RES CORP0 citations59
US11842888B2Dec 12, 2023
Removing metal contamination from surfaces of a processing chamber
LAM RES CORP1 citations59
US12586765B2Mar 24, 2026
Surface modification for metal-containing photoresist deposition
LAM RES CORP0 citations51
NOVELLUS SYSTEMS INC
3 patentsUS7482245B1Jan 27, 2009
Stress profile modulation in STI gap fill
NOVELLUS SYSTEMS INC22 citations93
US7163896B1Jan 16, 2007
Biased H2 etch process in deposition-etch-deposition gap fill
NOVELLUS SYSTEMS INC58 citations93
US6764952B1Jul 20, 2004
Systems and methods to retard copper diffusion and improve film adhesion for a dielectric barrier on copper
NOVELLUS SYSTEMS INC28 citations92
YU JENGYI
2 patentsCYPRESS SEMICONDUCTOR CORP
2 patentsUS6822333B1Nov 23, 2004
Methods of filling constrained spaces with insulating materials and/or of forming contact holes and/or contacts in an integrated circuit
CYPRESS SEMICONDUCTOR CORP6 citations74
US6303496B1Oct 16, 2001
Methods of filling constrained spaces with insulating materials and/or of forming contact holes and/or contacts in an integrated circuit
CYPRESS SEMICONDUCTOR CORP10 citations74