Inventor
YANG EUN SU
KR10 patents
Patents
10 patentsUS11359306B2Jun 14, 2022
Method for preparing a SiC ingot and device for preparing a SiC ingot wherein electrical resistance of crucible body is 2.9 ohms or more
SENIC INC2 citations71
US11856678B2Dec 26, 2023
Method of measuring a graphite article, apparatus for a measurement, and ingot growing system
SENIC INC0 citations61
US11646209B2May 9, 2023
Method of cleaning wafer and wafer with reduced impurities
SENIC INC0 citations60
US11566344B2Jan 31, 2023
Silicon carbide ingot, wafer, method for producing a silicon carbide ingot, and method for manufacturing a wafer
SENIC INC0 citations60
US11474012B2Oct 18, 2022
Method for preparing silicon carbide wafer and silicon carbide wafer
SENIC INC0 citations60
US11795572B2Oct 24, 2023
Method of manufacturing a silicon carbide ingot comprising moving a heater surrounding a reactor to induce silicon carbide raw materials to sublimate and growing the silicon carbide ingot on a seed crystal
SENIC INC0 citations50
US11591711B2Feb 28, 2023
Method and system for producing silicon carbide ingot
SENIC INC0 citations50
US11447889B2Sep 20, 2022
Adhesive layer of seed crystal, method for preparing a laminate using the same, and method for preparing a wafer
SENIC INC0 citations50
US11339497B2May 24, 2022
Silicon carbide ingot manufacturing method and silicon carbide ingot manufactured thereby
SENIC INC0 citations50
US11939698B2Mar 26, 2024
Wafer manufacturing method, epitaxial wafer manufacturing method, and wafer and epitaxial wafer manufactured thereby
SENIC INC0 citations49