Inventor
SEN GUPTA ARNAB
US20 patents
Patents
20 patentsUS11171243B2Nov 9, 2021
Transistor structures with a metal oxide contact buffer
INTEL CORP11 citations85
US11843058B2Dec 12, 2023
Transistor structures with a metal oxide contact buffer and a method of fabricating the transistor structures
INTEL CORP3 citations73
US11417770B2Aug 16, 2022
Vertical thin-film transistors between metal layers
INTEL CORP5 citations73
US12495559B2Dec 9, 2025
Capacitor with dual dielectric layers
INTEL CORP1 citations63
US12437929B2Oct 7, 2025
Capacitor with an electrically conductive layer coupled with a metal layer of the capacitor
INTEL CORP0 citations62
US12376342B2Jul 29, 2025
Passivation layers for thin film transistors
INTEL CORP0 citations62
US12349416B2Jul 1, 2025
Transistor structures with a metal oxide contact buffer and a method of fabricating the transistor structures
INTEL CORP0 citations62
US12328946B2Jun 10, 2025
ESD protection decoupled from diffusion
INTEL CORP0 citations62
US12224309B2Feb 11, 2025
Capacitors with built-in electric fields
INTEL CORP0 citations62
US11955560B2Apr 9, 2024
Passivation layers for thin film transistors and methods of fabrication
INTEL CORP1 citations62
US11777029B2Oct 3, 2023
Vertical transistors for ultra-dense logic and memory applications
INTEL CORP0 citations62
US11637185B2Apr 25, 2023
Contact stacks to reduce hydrogen in semiconductor devices
INTEL CORP0 citations62
US11522060B2Dec 6, 2022
Epitaxial layers on contact electrodes for thin- film transistors
INTEL CORP1 citations62
US12119387B2Oct 15, 2024
Low resistance approaches for fabricating contacts and the resulting structures
INTEL CORP1 citations61
US12058847B2Aug 6, 2024
Monolithic memory stack
INTEL CORP0 citations61
US11444205B2Sep 13, 2022
Contact stacks to reduce hydrogen in thin film transistor
INTEL CORP1 citations60
US12575165B2Mar 10, 2026
Transistor devices with high-k perovskite gate dielectrics
INTEL CORP0 citations57
US12375060B2Jul 29, 2025
Digitally controlled lithographically-defined multi-frequency acoustic resonators
INTEL CORP0 citations55
US12432948B2Sep 30, 2025
Compositional engineering of Schottky diode
INTEL CORP0 citations51
US12328927B2Jun 10, 2025
Low resistance and reduced reactivity approaches for fabricating contacts and the resulting structures
INTEL CORP0 citations51