Inventor
KATO HISAKI
JP41 patents
⚠️ This page may combine multiple inventors who share the name “KATO HISAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOYODA GOSEI KK
24 patentsUS5122845AJun 16, 1992
Substrate for growing gallium nitride compound-semiconductor device and light emitting diode
TOYODA GOSEI KK217 citations99
US6423984B1Jul 23, 2002
Light-emitting semiconductor device using gallium nitride compound semiconductor
TOYODA GOSEI KK85 citations98
US5620557AApr 15, 1997
Sapphireless group III nitride semiconductor and method for making same
TOYODA GOSEI KK139 citations98
US7138286B2Nov 21, 2006
Light-emitting semiconductor device using group III nitrogen compound
TOYODA GOSEI KK47 citations96
US6362017B1Mar 26, 2002
Light-emitting semiconductor device using gallium nitride group compound
TOYODA GOSEI KK44 citations96
US6265726B1Jul 24, 2001
Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity
TOYODA GOSEI KK62 citations96
US6005258ADec 21, 1999
Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities
TOYODA GOSEI KK69 citations96
US5733796AMar 31, 1998
Light-emitting semiconductor device using gallium nitride group compound
TOYODA GOSEI KK77 citations96
US5650641AJul 22, 1997
Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device
TOYODA GOSEI KK56 citations96
US5278433AJan 11, 1994
Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer
TOYODA GOSEI KK86 citations96
US6853009B2Feb 8, 2005
Light-emitting semiconductor device using gallium nitride compound semiconductor
TOYODA GOSEI KK16 citations93
US6617668B1Sep 9, 2003
Methods and devices using group III nitride compound semiconductor
TOYODA GOSEI KK25 citations93
US5604763AFeb 18, 1997
Group III nitride compound semiconductor laser diode and method for producing same
TOYODA GOSEI KK49 citations93
US6881651B2Apr 19, 2005
Methods and devices using group III nitride compound semiconductor
TOYODA GOSEI KK13 citations84
US6249012B1Jun 19, 2001
Light emitting semiconductor device using gallium nitride group compound
TOYODA GOSEI KK13 citations82
US7867800B2Jan 11, 2011
Light-emitting semiconductor device using group III nitrogen compound
TOYODA GOSEI KK5 citations74
US7045809B2May 16, 2006
Light-emitting semiconductor device using gallium nitride compound semiconductor
TOYODA GOSEI KK5 citations74
US7001790B2Feb 21, 2006
Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity
TOYODA GOSEI KK3 citations74
US6472690B1Oct 29, 2002
Gallium nitride group compound semiconductor
TOYODA GOSEI KK7 citations74
US6617787B2Sep 9, 2003
Light-emitting system with alicyclic epoxy sealing member
TOYODA GOSEI KK7 citations73
US6607595B1Aug 19, 2003
Method for producing a light-emitting semiconductor device
TOYODA GOSEI KK8 citations72
US7332366B2Feb 19, 2008
Light-emitting semiconductor device using group III nitrogen compound
TOYODA GOSEI KK3 citations63
US6830992B1Dec 14, 2004
Method for manufacturing a gallium nitride group compound semiconductor
TOYODA GOSEI KK1 citations52
US6472689B1Oct 29, 2002
Light emitting device
TOYODA GOSEI KK0 citations52
HAMAMATSU PHOTONICS KK
9 patentsUS5481158AJan 2, 1996
Electron multiplier with improved dynode geometry for reduced crosstalk
HAMAMATSU PHOTONICS KK26 citations89
US7623243B2Nov 24, 2009
Spectroscopic device
HAMAMATSU PHOTONICS KK14 citations84
US7115854B1Oct 3, 2006
Photomultiplier and photodetector including the same
HAMAMATSU PHOTONICS KK12 citations81
US5719390AFeb 17, 1998
Photodetection tube with a lid and cathode holding member in thermal contact with a cooler
HAMAMATSU PHOTONICS KK11 citations68
US7403286B2Jul 22, 2008
Spectroscopic analyzing apparatus
HAMAMATSU PHOTONICS KK3 citations63
US7323674B2Jan 29, 2008
Photodetector using photomultiplier and gain control method
HAMAMATSU PHOTONICS KK2 citations60
US6794629B2Sep 21, 2004
Photomultiplier
HAMAMATSU PHOTONICS KK5 citations57
US7102284B2Sep 5, 2006
Photomultiplier
HAMAMATSU PHOTONICS KK1 citations47
US5886341AMar 23, 1999
Photodetection tube with a slidably adapted cathode substrate
HAMAMATSU PHOTONICS KK1 citations46