Inventor

PARK KYU-CHARN

KR39 patents

⚠️ This page may combine multiple inventors who share the name “PARK KYU-CHARN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PARK KYU-CHARN

SAMSUNG ELECTRONICS CO LTD

NAND-type flash memory devices and methods of fabricating the same

Semiconductor-on-insulator substrates containing electrically insulating mesas

Flash memory device and method of making same

Non-volatile memory devices having a multi-layered charge storage layer and methods of forming the same

Non-volatile memory device

NAND-type flash memory devices and methods of fabricating the same

Highly integrated non-volatile memory cell array having a high program speed

Non-volatile memory device and fabrication method thereof

Flash memory device and method of making same

NAND-type flash memory devices and methods of fabricating the same

Semiconductor device and method of manufacturing the same

Methods of manufacturing non-volatile memory devices

Methods of manufacturing non-volatile memory devices by implanting metal ions into grain boundaries of variable resistance layers

Semiconductor device

Methods of fabricating a semiconductor device having multi-gate insulation layers and semiconductor devices fabricated thereby

Shallow trench isolation type semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the same including forming metal silicide gate lines and source lines

Methods of forming non-volatile memory devices having a multi-layered charge storage layer

Methods of forming semiconductor devices having field oxides in trenches and devices formed thereby

Cells of nonvolatile memory device with high inter-layer dielectric constant

Shallow trench isolation type semiconductor device and method of manufacturing the same

Methods of forming semiconductor-on-insulator substrates and devices and structures formed thereby

Methods of forming semiconductor-on-insulator substrates

Method for manufacturing a gate electrode of a MOS transistor

Non-volatile memory device, method of manufacturing the same, and method of operating the same

Method of fabricating cell of nonvolatile memory device with floating gate

Method of fabricating cell of nonvolatile memory device with floating gate

Integrated circuit memory devices having highly integrated SOI memory cells therein

Non-volatile memory device and method of manufacturing the same

Memory cell programming methods capable of reducing coupling effects

Non-volatile memory device and method of manufacturing the same

Non-volatile memory device and fabricating method thereof

Non-volatile memory devices, method of manufacturing and method of operating the same

Method of programming multi-level semiconductor memory device and multi-level semiconductor memory device

SAMSUNG ELECRONICS CO LTD

Non-volatile memory device and method of operating the same

KOREA ADVANCED INST SCI & TECH

Process for the production of sintered films of Cd1-x Znx S

LEE CHANG-HYUN

Non-volatile memory devices having a multi-layered charge storage layer

CHO BYUNG-KYU

Semiconductor memory device, method of fabricating the same, and devices employing the semiconductor memory device

SUNG SUK-KANG

Non-volatile memory devices including a floating gate and methods of manufacturing the same