Inventor

CHANG SUNG-NAM

KR20 patents

⚠️ This page may combine multiple inventors who share the name “CHANG SUNG-NAM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHANG SUNG-NAM

SAMSUNG ELECTRONICS CO LTD

Flash memory device and method of making same

Semiconductor devices comprising a plurality of gate structures

Non-volatile memory device

Highly integrated non-volatile memory cell array having a high program speed

Flash memory device and method of making same

Semiconductor device with a multilayered contact structure having a boro-phosphate silicate glass planarizing layer

Methods of fabricating a semiconductor device having multi-gate insulation layers and semiconductor devices fabricated thereby

Method for fabricating floating gate

Non-volatile memory devices and methods of forming non-volatile memory devices

Nonvolatile memory device and method of forming the same

Interconnection structure in semiconductor device and the method thereof

Non-volatile memory devices and methods of fabricating the same

Semiconductor integrated circuit having resistor

Non-volatile memory device and fabricating method thereof

Non-volatile memory devices including fuse covered field regions

Methods of forming integrated circuit devices having gate electrodes formed on non-uniformly thick gate insulating layers

Non-volatile memory devices including fuse covered field regions

Method of forming semiconductor device

KANG DAE-WOONG

Semiconductor devices comprising a plurality of gate structures

SAMSUNG ELECTRONICW CO LTD

Interconnection structure in semiconductor device