Inventor
TSANG WON-TIEN
US47 patents
⚠️ This page may combine multiple inventors who share the name “TSANG WON-TIEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
AT & T BELL LAB
18 patentsUS5208824AMay 4, 1993
Article comprising a DFB semiconductor laser
AT & T BELL LAB44 citations93
US4512022AApr 16, 1985
Semiconductor laser having graded index waveguide
AT & T BELL LAB40 citations93
US4476477AOct 9, 1984
Graded bandgap multilayer avalanche photodetector with energy step backs
AT & T BELL LAB38 citations92
US4636268AJan 13, 1987
Chemical beam deposition method utilizing alkyl compounds in a carrier gas
AT & T BELL LAB22 citations82
US4575919AMar 18, 1986
Method of making heteroepitaxial ridge overgrown laser
AT & T BELL LAB25 citations82
US5346581ASep 13, 1994
Method of making a compound semiconductor device
AT & T BELL LAB18 citations74
US5224113AJun 29, 1993
Semiconductor laser having reduced temperature dependence
AT & T BELL LAB15 citations74
US4622673ANov 11, 1986
Heteroepitaxial ridge overgrown laser
AT & T BELL LAB17 citations74
US4622671ANov 11, 1986
Multicavity optical device
AT & T BELL LAB17 citations74
US4622093ANov 11, 1986
Method of selective area epitaxial growth using ion beams
AT & T BELL LAB11 citations74
US4602370AJul 22, 1986
Large optical cavity laser having a plurality of active layers
AT & T BELL LAB17 citations74
US4564946AJan 14, 1986
Optical communications system using frequency shift keying
AT & T BELL LAB15 citations74
US4464342AAug 7, 1984
Molecular beam epitaxy apparatus for handling phosphorus
AT & T BELL LAB8 citations74
US4464211AAug 7, 1984
Method for selective area growth by liquid phase epitaxy
AT & T BELL LAB14 citations74
US4599632AJul 8, 1986
Photodetector with graded bandgap region
AT & T BELL LAB17 citations73
US5153693AOct 6, 1992
Circuit including bistable, bipolar transistor
AT & T BELL LAB4 citations63
US4627065ADec 2, 1986
Double active layer semiconductor laser
AT & T BELL LAB6 citations63
US5115294AMay 19, 1992
Optoelectronic integrated circuit
AT & T BELL LAB6 citations60
BELL TELEPHONE LABOR INC
12 patentsUS4291327ASep 22, 1981
MOS Devices
BELL TELEPHONE LABOR INC47 citations93
US4099305AJul 11, 1978
Fabrication of mesa devices by MBE growth over channeled substrates
BELL TELEPHONE LABOR INC31 citations93
US4435809AMar 6, 1984
Passively mode locked laser having a saturable absorber
BELL TELEPHONE LABOR INC27 citations89
US4438446AMar 20, 1984
Double barrier double heterostructure laser
BELL TELEPHONE LABOR INC23 citations82
US4236122ANov 25, 1980
Mesa devices fabricated on channeled substrates
BELL TELEPHONE LABOR INC24 citations82
US4216036AAug 5, 1980
Self-terminating thermal oxidation of Al-containing group III-V compound layers
BELL TELEPHONE LABOR INC27 citations82
US4282541AAug 4, 1981
Planar P-I-N photodetectors
BELL TELEPHONE LABOR INC16 citations74
US4269635AMay 26, 1981
Strip buried heterostructure laser
BELL TELEPHONE LABOR INC18 citations74
US4264916AApr 28, 1981
Semiconductor barrier Josephson junction
BELL TELEPHONE LABOR INC8 citations74
US4194933AMar 25, 1980
Method for fabricating junction lasers having lateral current confinement
BELL TELEPHONE LABOR INC16 citations74
US4190813AFeb 26, 1980
Strip buried heterostructure laser
BELL TELEPHONE LABOR INC16 citations74
US4169997AOct 2, 1979
Lateral current confinement in junction lasers
BELL TELEPHONE LABOR INC16 citations74
AMERICAN TELEPHONE & TELEGRAPH
8 patentsUS4780748AOct 25, 1988
Field-effect transistor having a delta-doped ohmic contact
AMERICAN TELEPHONE & TELEGRAPH140 citations98
US4772934ASep 20, 1988
Delta-doped ohmic metal to semiconductor contacts
AMERICAN TELEPHONE & TELEGRAPH30 citations92
US4831628AMay 16, 1989
Denices fabricated using method of selective area epitaxial growth using ion beams
AMERICAN TELEPHONE & TELEGRAPH21 citations82
US4694318ASep 15, 1987
Sawtooth photodetector
AMERICAN TELEPHONE & TELEGRAPH18 citations82
US4785454ANov 15, 1988
Stabilized cleaved-coupled cavity laser
AMERICAN TELEPHONE & TELEGRAPH8 citations74
US4784967ANov 15, 1988
Method for fabricating a field-effect transistor with a self-aligned gate
AMERICAN TELEPHONE & TELEGRAPH8 citations74
US4737960AApr 12, 1988
Rare earth doped semiconductor laser
AMERICAN TELEPHONE & TELEGRAPH18 citations74
US4734380AMar 29, 1988
Multicavity optical device held together by metallic film
AMERICAN TELEPHONE & TELEGRAPH17 citations74
LUCENT TECHNOLOGIES INC
4 patentsUS5548607AAug 20, 1996
Article comprising an integrated laser/modulator combination
LUCENT TECHNOLOGIES INC39 citations93
US6108362AAug 22, 2000
Broadband tunable semiconductor laser source
LUCENT TECHNOLOGIES INC21 citations91
US5606573AFeb 25, 1997
Method and apparatus for control of lasing wavelength in distributed feedback lasers
LUCENT TECHNOLOGIES INC10 citations74
US5834792ANov 10, 1998
Articles comprising doped semiconductor material
LUCENT TECHNOLOGIES INC0 citations41