Inventor
WESTMEYER ANDREW N
US9 patents
⚠️ This page may combine multiple inventors who share the name “WESTMEYER ANDREW N”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
8 patentsUS7402872B2Jul 22, 2008
Method for forming an integrated circuit
INTEL CORP141 citations98
US7195985B2Mar 27, 2007
CMOS transistor junction regions formed by a CVD etching and deposition sequence
INTEL CORP98 citations97
US7479432B2Jan 20, 2009
CMOS transistor junction regions formed by a CVD etching and deposition sequence
INTEL CORP31 citations92
US7427775B2Sep 23, 2008
Fabricating strained channel epitaxial source/drain transistors
INTEL CORP17 citations92
US7226842B2Jun 5, 2007
Fabricating strained channel epitaxial source/drain transistors
INTEL CORP27 citations92
US7812394B2Oct 12, 2010
CMOS transistor junction regions formed by a CVD etching and deposition sequence
INTEL CORP5 citations73
US7479431B2Jan 20, 2009
Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain
INTEL CORP6 citations73
US7858981B2Dec 28, 2010
Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain
INTEL CORP0 citations52