Inventor
JOHNSON WAYNE L
US59 patents
⚠️ This page may combine multiple inventors who share the name “JOHNSON WAYNE L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
42 patentsUS7166233B2Jan 23, 2007
Pulsed plasma processing method and apparatus
TOKYO ELECTRON LTD301 citations99
US6740853B1May 25, 2004
Multi-zone resistance heater
TOKYO ELECTRON LTD782 citations99
US6332961B1Dec 25, 2001
Device and method for detecting and preventing arcing in RF plasma systems
TOKYO ELECTRON LTD147 citations99
US6313584B1Nov 6, 2001
Electrical impedance matching system and method
TOKYO ELECTRON LTD193 citations99
US7311782B2Dec 25, 2007
Apparatus for active temperature control of susceptors
TOKYO ELECTRON LTD98 citations98
US6863020B2Mar 8, 2005
Segmented electrode apparatus for plasma processing
TOKYO ELECTRON LTD93 citations98
US6392187B1May 21, 2002
Apparatus and method for utilizing a plasma density gradient to produce a flow of particles
TOKYO ELECTRON LTD140 citations98
US7066703B2Jun 27, 2006
Chuck transport method and system
TOKYO ELECTRON LTD44 citations93
US6949722B2Sep 27, 2005
Method and apparatus for active temperature control of susceptors
TOKYO ELECTRON LTD33 citations93
US6819053B2Nov 16, 2004
Hall effect ion source at high current density
TOKYO ELECTRON LTD36 citations93
US6758948B2Jul 6, 2004
Method and apparatus for depositing films
TOKYO ELECTRON LTD42 citations93
US6740842B2May 25, 2004
Radio frequency power source for generating an inductively coupled plasma
TOKYO ELECTRON LTD84 citations93
US6690568B2Feb 10, 2004
Fluid dielectric variable capacitor
TOKYO ELECTRON LTD15 citations93
US6530342B1Mar 11, 2003
Large area plasma source
TOKYO ELECTRON LTD19 citations93
US6511577B1Jan 28, 2003
Reduced impedance chamber
TOKYO ELECTRON LTD42 citations93
US6425953B1Jul 30, 2002
All-surface biasable and/or temperature-controlled electrostatically-shielded RF plasma source
TOKYO ELECTRON LTD23 citations93
US6385977B1May 14, 2002
ESRF chamber cooling system and process
TOKYO ELECTRON LTD22 citations93
US6339206B1Jan 15, 2002
Apparatus and method for adjusting density distribution of a plasma
TOKYO ELECTRON LTD42 citations93
US7102292B2Sep 5, 2006
Method and device for removing harmonics in semiconductor plasma processing systems
TOKYO ELECTRON LTD38 citations92
US7019253B2Mar 28, 2006
Electrically controlled plasma uniformity in a high density plasma source
TOKYO ELECTRON LTD37 citations92
US6861844B1Mar 1, 2005
Electron density measurement and plasma process control system using changes in the resonant frequency of an open resonator containing the plasma
TOKYO ELECTRON LTD22 citations92
US6812646B2Nov 2, 2004
Method and device for attenuating harmonics in semiconductor plasma processing systems
TOKYO ELECTRON LTD26 citations92
US6741944B1May 25, 2004
Electron density measurement and plasma process control system using a microwave oscillator locked to an open resonator containing the plasma
TOKYO ELECTRON LTD28 citations92
US6573731B1Jun 3, 2003
Electron density measurement and control system using plasma-induced changes in the frequency of a microwave oscillator
TOKYO ELECTRON LTD22 citations92
US6891124B2May 10, 2005
Method of wafer band-edge measurement using transmission spectroscopy and a process for controlling the temperature uniformity of a wafer
TOKYO ELECTRON LTD45 citations91
US7075031B2Jul 11, 2006
Method of and structure for controlling electrode temperature
TOKYO ELECTRON LTD43 citations89
US7462335B2Dec 9, 2008
Optical monitoring and control system and method for plasma reactors
TOKYO ELECTRON LTD10 citations84
US7285758B2Oct 23, 2007
Rapid thermal processing lamp and method for manufacturing the same
TOKYO ELECTRON LTD10 citations84
US6767698B2Jul 27, 2004
High speed stripping for damaged photoresist
TOKYO ELECTRON LTD15 citations84
US7234862B2Jun 26, 2007
Apparatus for measuring temperatures of a wafer using specular reflection spectroscopy
TOKYO ELECTRON LTD15 citations83
US6913703B2Jul 5, 2005
Method of adjusting the thickness of an electrode in a plasma processing system
TOKYO ELECTRON LTD14 citations83
US6806650B2Oct 19, 2004
Structure and the method for measuring the spectral content of an electric field as a function of position inside a plasma
TOKYO ELECTRON LTD15 citations83
US7091503B2Aug 15, 2006
Measuring plasma uniformity in-situ at wafer level
TOKYO ELECTRON LTD8 citations74
US7030045B2Apr 18, 2006
Method of fabricating oxides with low defect densities
TOKYO ELECTRON LTD7 citations74
US7018553B2Mar 28, 2006
Optical monitoring and control system and method for plasma reactors
TOKYO ELECTRON LTD9 citations74
US6824363B2Nov 30, 2004
Linear inductive plasma pump for process reactors
TOKYO ELECTRON LTD11 citations74
US6630364B2Oct 7, 2003
System for automatic control of the wall bombardment to control wall deposition
TOKYO ELECTRON LTD7 citations74
US6491742B1Dec 10, 2002
ESRF coolant degassing process
TOKYO ELECTRON LTD12 citations74
US6729850B2May 4, 2004
Applied plasma duct system
TOKYO ELECTRON LTD8 citations72
US6559601B1May 6, 2003
Plasma vacuum pump
TOKYO ELECTRON LTD9 citations68
US6811611B2Nov 2, 2004
Esrf source for ion plating epitaxial deposition
TOKYO ELECTRON LTD5 citations63
US6790487B2Sep 14, 2004
Active control of electron temperature in an electrostatically shielded radio frequency plasma source
TOKYO ELECTRON LTD3 citations63
TOWN COMPASS LLC
2 patentsEPSILON LP
2 patentsAMERICAN TELEPHONE & TELEGRAPH
1 patentJOHNSON WAYNE L
1 patentEPSILON LTD PARTNERSHIP
1 patentEPSILON
1 patentShowing the top 50 of 59 patents by PatentIndex Score.