P

Inventor

KIM JAE-JOON

US74 patents
⚠️ This page may combine multiple inventors who share the name “KIM JAE-JOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

18 patents
US7177177B2Feb 13, 2007

Back-gate controlled read SRAM cell

IBM60 citations98
US7362606B2Apr 22, 2008

Asymmetrical memory cells and memories using the cells

IBM54 citations96
US7313012B2Dec 25, 2007

Back-gate controlled asymmetrical memory cell and memory using the cell

IBM23 citations92
US7642864B2Jan 5, 2010

Circuits and design structures for monitoring NBTI (negative bias temperature instability) effect and/or PBTI (positive bias temperature instability) effect

IBM35 citations91
US7668035B2Feb 23, 2010

Memory circuits with reduced leakage power and design structures for same

IBM14 citations84
US7492628B2Feb 17, 2009

Computer-readable medium encoding a memory using a back-gate controlled asymmetrical memory cell

IBM10 citations84
US7903450B2Mar 8, 2011

Asymmetrical memory cells and memories using the cells

IBM6 citations74
US7439755B2Oct 21, 2008

Electronic circuit for measurement of transistor variability and the like

IBM8 citations74
US8004305B2Aug 23, 2011

Electronic circuit for measurement of transistor variability and the like

IBM3 citations63
US7787285B2Aug 31, 2010

Independent-gate controlled asymmetrical memory cell and memory using the cell

IBM2 citations63
US7764080B2Jul 27, 2010

Methods of operating an electronic circuit for measurement of transistor variability and the like

IBM2 citations63
US7746709B2Jun 29, 2010

Memory circuit with decoupled read and write bit lines and improved write stability

IBM3 citations63
US7742327B2Jun 22, 2010

Computer-readable medium encoding a back-gate controlled asymmetrical memory cell and memory using the cell

IBM4 citations63
US7495969B2Feb 24, 2009

Techniques for improving write stability of memory with decoupled read and write bit lines

IBM4 citations63
US7417889B2Aug 26, 2008

Independent-gate controlled asymmetrical memory cell and memory using the cell

IBM5 citations63
US7085798B2Aug 1, 2006

Sense-amp based adder with source follower pass gate evaluation tree

IBM4 citations63
US6789099B2Sep 7, 2004

Sense-amp based adder with source follower evaluation tree

IBM6 citations63
US7548822B2Jun 16, 2009

Apparatus and method for determining the slew rate of a signal produced by an integrated circuit

IBM2 citations62

SAMSUNG ELECTRONICS CO LTD

11 patents

KIM JAE-JOON

4 patents

BANSAL ADITYA

4 patents

POSTECH RES & BUSINESS DEV FOUND

3 patents

KWANGJU INST SCI & TECH

1 patent

PURDUE RESEARCH FOUNDATION

1 patent

ELECTRONICS AND COMM RES INST

1 patent

ULSAN NAT INST SCIENCE & TECH UNIST

1 patent

SAMSUNG DISPLAY CO LTD

1 patent

POSTECH ACADEMY—INDUSTRY FOUND

1 patent

CT ADVANCED SOFT ELECTRONICS

1 patent

POSTECH ACAD IND FOUND

1 patent

SEOUL NAT UNIV R&DB FOUNDATION

1 patent

KIM DAE HYUN

1 patent

Showing the top 50 of 74 patents by PatentIndex Score.