P

Inventor

LEE YONG-KYU

KR73 patents
⚠️ This page may combine multiple inventors who share the name “LEE YONG-KYU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

37 patents
US7297600B2Nov 20, 2007

Methods of forming fin field effect transistors using oxidation barrier layers

SAMSUNG ELECTRONICS CO LTD135 citations99
US9472282B2Oct 18, 2016

Resistive memory device and method of operating the same

SAMSUNG ELECTRONICS CO LTD69 citations98
US6803276B2Oct 12, 2004

Semiconductor device having a flash memory cell and fabrication method thereof

SAMSUNG ELECTRONICS CO LTD79 citations98
US7005349B2Feb 28, 2006

Method of manufacturing twin-ONO-type SONOS memory using reverse self-alignment process

SAMSUNG ELECTRONICS CO LTD48 citations96
US7402493B2Jul 22, 2008

Method for forming non-volatile memory devices

SAMSUNG ELECTRONICS CO LTD35 citations93
US7161206B2Jan 9, 2007

Non-volatile memory devices

SAMSUNG ELECTRONICS CO LTD33 citations93
US6563168B2May 13, 2003

Non-volatile semiconductor device with anti-punch through regions

SAMSUNG ELECTRONICS CO LTD24 citations93
US6486508B1Nov 26, 2002

Non-volatile semiconductor memory devices with control gates overlapping pairs of floating gates

SAMSUNG ELECTRONICS CO LTD35 citations93
US6348378B1Feb 19, 2002

Method of making a non-volatile semiconductor device with reduced program disturbance

SAMSUNG ELECTRONICS CO LTD23 citations93
US9171617B1Oct 27, 2015

Resistive memory device and method programming same

SAMSUNG ELECTRONICS CO LTD26 citations92
US6784476B2Aug 31, 2004

Semiconductor device having a flash memory cell and fabrication method thereof

SAMSUNG ELECTRONICS CO LTD42 citations92
US9646685B2May 9, 2017

Resistive memory device, resistive memory, and operating method of the resistive memory device

SAMSUNG ELECTRONICS CO LTD7 citations84
US9514813B2Dec 6, 2016

Resistive memory device, resistive memory system, and operating method thereof

SAMSUNG ELECTRONICS CO LTD7 citations84
US9183932B1Nov 10, 2015

Resistive memory device and method of operating the same

SAMSUNG ELECTRONICS CO LTD11 citations84
US9082865B2Jul 14, 2015

Split-gate type nonvolatile memory device, semiconductor device having split-type nonvolatile memory device embedded therein, and methods of forming the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US7928492B2Apr 19, 2011

Non-volatile memory integrated circuit device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD10 citations84
US7511334B2Mar 31, 2009

Twin-ONO-type SONOS memory

SAMSUNG ELECTRONICS CO LTD15 citations84
US6724661B2Apr 20, 2004

Erasing method in non-volatile memory device

SAMSUNG ELECTRONICS CO LTD14 citations84
US9954030B2Apr 24, 2018

Semiconductor apparatus including magnetoresistive device

SAMSUNG ELECTRONICS CO LTD6 citations83
US7652322B2Jan 26, 2010

Split gate flash memory device having self-aligned control gate and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD5 citations74
US7601592B2Oct 13, 2009

Method for forming multi-gate non-volatile memory devices using a damascene process

SAMSUNG ELECTRONICS CO LTD6 citations74
US7439574B2Oct 21, 2008

Silicon/oxide/nitride/silicon nonvolatile memory with vertical channels

SAMSUNG ELECTRONICS CO LTD8 citations74
US7341912B2Mar 11, 2008

Split gate flash memory device having self-aligned control gate and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD8 citations74
US9728252B2Aug 8, 2017

Resistive memory device with temperature compensation, resistive memory system, and operating method thereof

SAMSUNG ELECTRONICS CO LTD3 citations73
US9685227B2Jun 20, 2017

Control of memory device reading based on cell resistance

SAMSUNG ELECTRONICS CO LTD3 citations73
US9659645B2May 23, 2017

Resistive memory device and method of writing data

SAMSUNG ELECTRONICS CO LTD4 citations73
US9558822B2Jan 31, 2017

Resistive memory device and method of operating the resistive memory device

SAMSUNG ELECTRONICS CO LTD6 citations73
US9472275B2Oct 18, 2016

Method of operating memory device using different read conditions

SAMSUNG ELECTRONICS CO LTD5 citations73
US9437290B2Sep 6, 2016

Resistive memory device and operation

SAMSUNG ELECTRONICS CO LTD6 citations73
US9361974B2Jun 7, 2016

Resistive memory device and method of operating the same to reduce leakage current

SAMSUNG ELECTRONICS CO LTD3 citations73
US9269429B2Feb 23, 2016

Resistive memory device, resistive memory system, and method of operating resistive memory device

SAMSUNG ELECTRONICS CO LTD3 citations73
US11657858B2May 23, 2023

Nonvolatile memory devices including memory planes and memory systems including the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US10566385B2Feb 18, 2020

Semiconductor apparatus including magnetoresistive device

SAMSUNG ELECTRONICS CO LTD5 citations72
US9530494B2Dec 27, 2016

Memory device and method of operating the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US11037626B2Jun 15, 2021

Nonvolatile memory devices including memory planes and memory systems including the same

SAMSUNG ELECTRONICS CO LTD1 citations62
US8913430B2Dec 16, 2014

Non-volatile memory device

SAMSUNG ELECTRONICS CO LTD2 citations62
US7733696B2Jun 8, 2010

Non-volatile memory devices including local control gates on multiple isolated well regions and related methods and systems

SAMSUNG ELECTRONICS CO LTD5 citations62

MEDIPLEX CORP KOREA

3 patents

LEE YONG-KYU

2 patents

SEO BO YOUNG

2 patents

SEO BO-YOUNG

2 patents

OH CHANG-WOO

1 patent

GUST N GALE CO LTD

1 patent

YOON CHI-WEON

1 patent

SAMSUNG DISPLAY DEVICES CO LTD

1 patent

Showing the top 50 of 73 patents by PatentIndex Score.