Inventor
LUO HUNG-YI
TW10 patents
⚠️ This page may combine multiple inventors who share the name “LUO HUNG-YI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
VANGUARD INT SEMICONDUCT CORP
8 patentsUS5895239AApr 20, 1999
Method for fabricating dynamic random access memory (DRAM) by simultaneous formation of tungsten bit lines and tungsten landing plug contacts
VANGUARD INT SEMICONDUCT CORP132 citations97
US6265296B1Jul 24, 2001
Method for forming self-aligned contacts using a hard mask
VANGUARD INT SEMICONDUCT CORP22 citations92
US6150213ANov 21, 2000
Method of forming a cob dram by using self-aligned node and bit line contact plug
VANGUARD INT SEMICONDUCT CORP26 citations92
US6124192ASep 26, 2000
Method for fabricating ultra-small interconnections using simplified patterns and sidewall contact plugs
VANGUARD INT SEMICONDUCT CORP35 citations92
US6033962AMar 7, 2000
Method of fabricating sidewall spacers for a self-aligned contact hole
VANGUARD INT SEMICONDUCT CORP40 citations90
US6100137AAug 8, 2000
Etch stop layer used for the fabrication of an overlying crown shaped storage node structure
VANGUARD INT SEMICONDUCT CORP51 citations89
US6150678ANov 21, 2000
Method and pattern for avoiding micro-loading effect in an etching process
VANGUARD INT SEMICONDUCT CORP16 citations77
US5990018ANov 23, 1999
Oxide etching process using nitrogen plasma
VANGUARD INT SEMICONDUCT CORP2 citations61