Inventor
YAO GONGDA
US31 patents
⚠️ This page may combine multiple inventors who share the name “YAO GONGDA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
28 patentsUS6919275B2Jul 19, 2005
Method of preventing diffusion of copper through a tantalum-comprising barrier layer
APPLIED MATERIALS INC87 citations99
US5985759ANov 16, 1999
Oxygen enhancement of ion metal plasma (IMP) sputter deposited barrier layers
APPLIED MATERIALS INC120 citations97
US7253109B2Aug 7, 2007
Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
APPLIED MATERIALS INC44 citations96
US7074714B2Jul 11, 2006
Method of depositing a metal seed layer on semiconductor substrates
APPLIED MATERIALS INC26 citations96
US6939801B2Sep 6, 2005
Selective deposition of a barrier layer on a dielectric material
APPLIED MATERIALS INC56 citations96
US6758947B2Jul 6, 2004
Damage-free sculptured coating deposition
APPLIED MATERIALS INC47 citations96
US6271592B1Aug 7, 2001
Sputter deposited barrier layers
APPLIED MATERIALS INC104 citations96
US6045666AApr 4, 2000
Aluminum hole filling method using ionized metal adhesion layer
APPLIED MATERIALS INC61 citations96
US5911113AJun 8, 1999
Silicon-doped titanium wetting layer for aluminum plug
APPLIED MATERIALS INC65 citations96
US6207558B1Mar 27, 2001
Barrier applications for aluminum planarization
APPLIED MATERIALS INC77 citations95
US7381639B2Jun 3, 2008
Method of depositing a metal seed layer on semiconductor substrates
APPLIED MATERIALS INC10 citations93
US6528180B1Mar 4, 2003
Liner materials
APPLIED MATERIALS INC26 citations92
US6368880B2Apr 9, 2002
Barrier applications for aluminum planarization
APPLIED MATERIALS INC33 citations92
US6238533B1May 29, 2001
Integrated PVD system for aluminum hole filling using ionized metal adhesion layer
APPLIED MATERIALS INC33 citations92
US6110821AAug 29, 2000
Method for forming titanium silicide in situ
APPLIED MATERIALS INC37 citations92
US6077402AJun 20, 2000
Central coil design for ionized metal plasma deposition
APPLIED MATERIALS INC24 citations92
US6299689B1Oct 9, 2001
Reflow chamber and process
APPLIED MATERIALS INC23 citations91
US6451179B1Sep 17, 2002
Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasma
APPLIED MATERIALS INC18 citations84
US7687909B2Mar 30, 2010
Metal / metal nitride barrier layer for semiconductor device applications
APPLIED MATERIALS INC7 citations74
US6139698AOct 31, 2000
Method and apparatus for reducing the first wafer effect
APPLIED MATERIALS INC6 citations74
US6908865B2Jun 21, 2005
Method and apparatus for cleaning substrates
APPLIED MATERIALS INC10 citations71
US6383915B1May 7, 2002
Tailoring of a wetting/barrier layer to reduce electromigration in an aluminum interconnect
APPLIED MATERIALS INC8 citations71
US7989343B2Aug 2, 2011
Method of depositing a uniform metal seed layer over a plurality of recessed semiconductor features
APPLIED MATERIALS INC2 citations63
US7795138B2Sep 14, 2010
Method of depositing a metal seed layer over recessed feature surfaces in a semiconductor substrate
APPLIED MATERIALS INC2 citations63
US6303994B1Oct 16, 2001
Method and apparatus for reducing the first wafer effect
APPLIED MATERIALS INC2 citations63
US9991157B2Jun 5, 2018
Method for depositing a diffusion barrier layer and a metal conductive layer
APPLIED MATERIALS INC0 citations52
US7589016B2Sep 15, 2009
Method of depositing a sculptured copper seed layer
APPLIED MATERIALS INC0 citations52
US6232665B1May 15, 2001
Silicon-doped titanium wetting layer for aluminum plug
APPLIED MATERIALS INC1 citations52
CHIANG TONY
2 patentsUS9390970B2Jul 12, 2016
Method for depositing a diffusion barrier layer and a metal conductive layer
CHIANG TONY10 citations92
US8158511B2Apr 17, 2012
Method of depositing a uniform barrier layer and metal seed layer with reduced overhang over a plurality of recessed semiconductor features
CHIANG TONY1 citations62