Inventor
HABUKA HITOSHI
JP27 patents
⚠️ This page may combine multiple inventors who share the name “HABUKA HITOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SHINETSU HANDOTAI KK
24 patentsUS6245647B1Jun 12, 2001
Method for fabrication of thin film
SHINETSU HANDOTAI KK287 citations99
US6569239B2May 27, 2003
Silicon epitaxial wafer and production method therefor
SHINETSU HANDOTAI KK550 citations97
US5749974AMay 12, 1998
Method of chemical vapor deposition and reactor therefor
SHINETSU HANDOTAI KK101 citations97
US6008128ADec 28, 1999
Method for smoothing surface of silicon single crystal substrate
SHINETSU HANDOTAI KK74 citations96
US5672204ASep 30, 1997
Apparatus for vapor-phase epitaxial growth
SHINETSU HANDOTAI KK54 citations96
US6235645B1May 22, 2001
Process for cleaning silicon semiconductor substrates
SHINETSU HANDOTAI KK20 citations92
US5938840AAug 17, 1999
Method for vapor phase growth
SHINETSU HANDOTAI KK17 citations92
US5913974AJun 22, 1999
Heat treating method of a semiconductor single crystal substrate
SHINETSU HANDOTAI KK33 citations92
US5755878AMay 26, 1998
Method for vapor phase growth
SHINETSU HANDOTAI KK30 citations92
US5743956AApr 28, 1998
Method of producing single crystal thin film
SHINETSU HANDOTAI KK21 citations92
US6309458B1Oct 30, 2001
Method for fabricating silicon thin film
SHINETSU HANDOTAI KK8 citations74
US5993557ANov 30, 1999
Apparatus for growing single-crystalline semiconductor film
SHINETSU HANDOTAI KK10 citations72
US6238478B1May 29, 2001
Silicon single crystal and process for producing single-crystal silicon thin film
SHINETSU HANDOTAI KK4 citations63
US6124209ASep 26, 2000
Method for treating a surface of a silicon single crystal and a method for manufacturing a silicon single crystal thin film
SHINETSU HANDOTAI KK3 citations63
US5885346AMar 23, 1999
Silicon semiconductor crystal and a method for manufacturing it
SHINETSU HANDOTAI KK4 citations63
US5868833AFeb 9, 1999
Method of producing silicon single crystal thin film
SHINETSU HANDOTAI KK6 citations63
US5858881AJan 12, 1999
Method of producing thin film
SHINETSU HANDOTAI KK6 citations63
US5057442AOct 15, 1991
Process for preparing light-emitting diodes using a maximum layer thickness equation
SHINETSU HANDOTAI KK5 citations63
US5718762AFeb 17, 1998
Method for vapor-phase growth
SHINETSU HANDOTAI KK5 citations62
US5849078ADec 15, 1998
Method for growing single-crystalline semiconductor film and apparatus used therefor
SHINETSU HANDOTAI KK4 citations61
US5846321ADec 8, 1998
Method of producing single crystal thin film
SHINETSU HANDOTAI KK6 citations61
US6194691B1Feb 27, 2001
Heating furnace and manufacturing method therefor
SHINETSU HANDOTAI KK0 citations52
US6048793AApr 11, 2000
Method and apparatus for thin film growth
SHINETSU HANDOTAI KK1 citations51
US5685905ANov 11, 1997
Method of manufacturing a single crystal thin film
SHINETSU HANDOTAI KK0 citations50