Inventor
HOFFMAN RANDY L
US21 patents
⚠️ This page may combine multiple inventors who share the name “HOFFMAN RANDY L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HEWLETT PACKARD DEVELOPMENT CO
12 patentsUS7732251B2Jun 8, 2010
Method of making a semiconductor device having a multicomponent oxide
HEWLETT PACKARD DEVELOPMENT CO266 citations99
US7462862B2Dec 9, 2008
Transistor using an isovalent semiconductor oxide as the active channel layer
HEWLETT PACKARD DEVELOPMENT CO3,916 citations99
US7297977B2Nov 20, 2007
Semiconductor device
HEWLETT PACKARD DEVELOPMENT CO4,153 citations99
US7282782B2Oct 16, 2007
Combined binary oxide semiconductor device
HEWLETT PACKARD DEVELOPMENT CO4,149 citations99
US7838348B2Nov 23, 2010
Semiconductor device
HEWLETT PACKARD DEVELOPMENT CO47 citations98
US7642573B2Jan 5, 2010
Semiconductor device
HEWLETT PACKARD DEVELOPMENT CO61 citations98
US7242039B2Jul 10, 2007
Semiconductor device
HEWLETT PACKARD DEVELOPMENT CO78 citations98
US7626201B2Dec 1, 2009
Semiconductor device
HEWLETT PACKARD DEVELOPMENT CO36 citations94
US7547591B2Jun 16, 2009
Semiconductor device
HEWLETT PACKARD DEVELOPMENT CO25 citations92
US7250627B2Jul 31, 2007
Semiconductor device
HEWLETT PACKARD DEVELOPMENT CO18 citations92
US7629191B2Dec 8, 2009
Semiconductor device
HEWLETT PACKARD DEVELOPMENT CO25 citations91
US7768080B2Aug 3, 2010
Multilayer dielectric
HEWLETT PACKARD DEVELOPMENT CO0 citations48
HOFFMAN RANDY L
3 patentsUS8647031B2Feb 11, 2014
Method of making a semiconductor device having a multicomponent oxide
HOFFMAN RANDY L149 citations98
US8203144B2Jun 19, 2012
Semiconductor device having a metal oxide channel
HOFFMAN RANDY L172 citations98
US8314420B2Nov 20, 2012
Semiconductor device with multiple component oxide channel
HOFFMAN RANDY L16 citations83