Inventor
CHUNG SUK-JIN
KR18 patents
⚠️ This page may combine multiple inventors who share the name “CHUNG SUK-JIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
14 patentsUS7271055B2Sep 18, 2007
Methods of forming low leakage currents metal-insulator-metal (MIM) capacitors and related MIM capacitors
SAMSUNG ELECTRONICS CO LTD26 citations92
US7354821B2Apr 8, 2008
Methods of fabricating trench capacitors with insulating layer collars in undercut regions
SAMSUNG ELECTRONICS CO LTD10 citations84
US7172946B2Feb 6, 2007
Methods for forming semiconductor devices including thermal processing
SAMSUNG ELECTRONICS CO LTD10 citations84
US7049232B2May 23, 2006
Methods for forming ruthenium films with β-diketone containing ruthenium complexes and method for manufacturing metal-insulator-metal capacitor using the same
SAMSUNG ELECTRONICS CO LTD8 citations74
US7700454B2Apr 20, 2010
Methods of forming integrated circuit electrodes and capacitors by wrinkling a layer that includes a high percentage of impurities
SAMSUNG ELECTRONICS CO LTD4 citations63
US7531861B2May 12, 2009
Trench capacitors with insulating layer collars in undercut regions
SAMSUNG ELECTRONICS CO LTD3 citations63
US7361548B2Apr 22, 2008
Methods of forming a capacitor using an atomic layer deposition process
SAMSUNG ELECTRONICS CO LTD4 citations63
US7091102B2Aug 15, 2006
Methods of forming integrated circuit devices having a capacitor with a hydrogen barrier spacer on a sidewall thereof and integrated circuit devices formed thereby
SAMSUNG ELECTRONICS CO LTD4 citations63
US7034350B2Apr 25, 2006
Capacitors including a cavity containing a buried layer
SAMSUNG ELECTRONICS CO LTD3 citations63
US9685498B2Jun 20, 2017
Methods of forming dielectric layers and methods of manufacturing semiconductor devices using the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US7842581B2Nov 30, 2010
Methods of forming metal layers using oxygen gas as a reaction source and methods of fabricating capacitors using such metal layers
SAMSUNG ELECTRONICS CO LTD1 citations52
US7416904B2Aug 26, 2008
Method for forming dielectric layer of capacitor
SAMSUNG ELECTRONICS CO LTD0 citations52
US7335550B2Feb 26, 2008
Methods for forming semiconductor devices including thermal processing
SAMSUNG ELECTRONICS CO LTD0 citations52
US10526706B2Jan 7, 2020
Gas supply unit and thin film deposition apparatus including the same
SAMSUNG ELECTRONICS CO LTD0 citations46