P

Inventor

CHUNG SUK-JIN

KR18 patents
⚠️ This page may combine multiple inventors who share the name “CHUNG SUK-JIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

14 patents
US7271055B2Sep 18, 2007

Methods of forming low leakage currents metal-insulator-metal (MIM) capacitors and related MIM capacitors

SAMSUNG ELECTRONICS CO LTD26 citations92
US7354821B2Apr 8, 2008

Methods of fabricating trench capacitors with insulating layer collars in undercut regions

SAMSUNG ELECTRONICS CO LTD10 citations84
US7172946B2Feb 6, 2007

Methods for forming semiconductor devices including thermal processing

SAMSUNG ELECTRONICS CO LTD10 citations84
US7049232B2May 23, 2006

Methods for forming ruthenium films with β-diketone containing ruthenium complexes and method for manufacturing metal-insulator-metal capacitor using the same

SAMSUNG ELECTRONICS CO LTD8 citations74
US7700454B2Apr 20, 2010

Methods of forming integrated circuit electrodes and capacitors by wrinkling a layer that includes a high percentage of impurities

SAMSUNG ELECTRONICS CO LTD4 citations63
US7531861B2May 12, 2009

Trench capacitors with insulating layer collars in undercut regions

SAMSUNG ELECTRONICS CO LTD3 citations63
US7361548B2Apr 22, 2008

Methods of forming a capacitor using an atomic layer deposition process

SAMSUNG ELECTRONICS CO LTD4 citations63
US7091102B2Aug 15, 2006

Methods of forming integrated circuit devices having a capacitor with a hydrogen barrier spacer on a sidewall thereof and integrated circuit devices formed thereby

SAMSUNG ELECTRONICS CO LTD4 citations63
US7034350B2Apr 25, 2006

Capacitors including a cavity containing a buried layer

SAMSUNG ELECTRONICS CO LTD3 citations63
US9685498B2Jun 20, 2017

Methods of forming dielectric layers and methods of manufacturing semiconductor devices using the same

SAMSUNG ELECTRONICS CO LTD1 citations52
US7842581B2Nov 30, 2010

Methods of forming metal layers using oxygen gas as a reaction source and methods of fabricating capacitors using such metal layers

SAMSUNG ELECTRONICS CO LTD1 citations52
US7416904B2Aug 26, 2008

Method for forming dielectric layer of capacitor

SAMSUNG ELECTRONICS CO LTD0 citations52
US7335550B2Feb 26, 2008

Methods for forming semiconductor devices including thermal processing

SAMSUNG ELECTRONICS CO LTD0 citations52
US10526706B2Jan 7, 2020

Gas supply unit and thin film deposition apparatus including the same

SAMSUNG ELECTRONICS CO LTD0 citations46

CHUNG SUK-JIN

1 patent

KANG SANG-YEOL

1 patent

KIM WAN-DON

1 patent

LEE SUNG-HAE

1 patent