Inventor
HWANG SUN-HWAN
KR23 patents
⚠️ This page may combine multiple inventors who share the name “HWANG SUN-HWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LG CHEMICAL LTD
10 patentsUS10518250B2Dec 31, 2019
Ferrite-based catalyst composite, method of preparing the same, and method of preparing butadiene using the same
LG CHEMICAL LTD3 citations72
US11660584B2May 30, 2023
Catalyst for oxidative dehydrogenation, method of preparing catalyst, and method of performing oxidative dehydrogenation using catalyst
LG CHEMICAL LTD0 citations61
US10994262B2May 4, 2021
Catalyst for oxidative dehydrogenation and method of preparing the same
LG CHEMICAL LTD0 citations61
US10888844B2Jan 12, 2021
Catalyst for oxidative dehydrogenation, method of preparing catalyst, and method of performing oxidative dehydrogenation using catalyst
LG CHEMICAL LTD1 citations61
US11247195B2Feb 15, 2022
Method of preparing catalyst for oxidative dehydrogenation and method of performing oxidative dehydrogenation using catalyst
LG CHEMICAL LTD0 citations51
US10926246B2Feb 23, 2021
Method of preparing catalyst for oxidative dehydrogenation
LG CHEMICAL LTD0 citations51
US10843173B2Nov 24, 2020
Ferrite catalyst for oxidative dehydrogenation, method of preparing ferrite catalyst, and method of preparing butadiene using ferrite catalyst
LG CHEMICAL LTD0 citations51
US10543478B2Jan 28, 2020
Catalyst for oxidative dehydrogenation and method of preparing the same
LG CHEMICAL LTD0 citations51
US10486150B2Nov 26, 2019
Catalyst for oxidative dehydrogenation and method of preparing the same
LG CHEMICAL LTD0 citations51
US10343958B2Jul 9, 2019
Catalyst for coating surface of porous material and method of treating surface of porous material
LG CHEMICAL LTD0 citations40
HYNIX SEMICONDUCTOR INC
5 patentsUS8048743B2Nov 1, 2011
Method for fabricating vertical channel type nonvolatile memory device
HYNIX SEMICONDUCTOR INC3 citations62
US7919373B2Apr 5, 2011
Method for doping polysilicon and method for fabricating a dual poly gate using the same
HYNIX SEMICONDUCTOR INC3 citations62
US7902628B2Mar 8, 2011
Semiconductor device with trench isolation structure
HYNIX SEMICONDUCTOR INC4 citations60
US7528052B2May 5, 2009
Method for fabricating semiconductor device with trench isolation structure
HYNIX SEMICONDUCTOR INC5 citations60
US7888245B2Feb 15, 2011
Plasma doping method and method for fabricating semiconductor device using the same
HYNIX SEMICONDUCTOR INC0 citations51