Inventor

YOUN SUN-PIL

KR35 patents

⚠️ This page may combine multiple inventors who share the name “YOUN SUN-PIL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YOUN SUN-PIL

SAMSUNG ELECTRONICS CO LTD

Methods of fabricating multi-bit phase-change memory devices and devices formed thereby

Semiconductor chip stack having improved encapsulation

Semiconductor packages and electronic systems including the same

Methods of fabricating a semiconductor device having MOS transistor with strained channel

Semiconductor package with inner leads exposed from an encapsulant

Semiconductor devices including high-k dielectric materials

Methods of forming gate structures for semiconductor devices

Method of forming a gate of a semiconductor device

Method of fabricating semiconductor device having metal conducting layer

Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting device

Methods of fabricating a semiconductor device having a metal gate pattern

Nickel salicide process with reduced dopant deactivation

Semiconductor packages and electronic systems including the same

Methods of forming recessed gate electrodes having covered layer interfaces

Semiconductor device including an ohmic layer

Semiconductor devices including gate structures and leakage barrier oxides

Recessed gate electrodes having covered layer interfaces and methods of forming the same

Method of forming a semiconductor device including an ohmic layer

Method of fabricating a semiconductor device having a silicon oxide layer, a method of fabricating a semiconductor device having dual spacers, a method of forming a silicon oxide layer on a substrate, and a method of forming dual spacers on a conductive material layer

Methods of fabricating a semiconductor device having a metal gate pattern

Method of fabricating a semiconductor device having a silicon oxide layer, a method of fabricating a semiconductor device having dual spacers, a method of forming a silicon oxide layer on a substrate, and a method of forming dual spacers on a conductive material layer

Non-volatile memory device and semiconductor package including the same

Method of fabricating light-emitting apparatus with improved light extraction efficiency and light-emitting apparatus fabricated using the method

Methods of fabricating semiconductor device having a metal gate pattern

Methods of fabricating integrated circuit gates by pretreating prior to oxidizing

Methods of forming a semiconductor device having a metal gate electrode and associated devices

KIM YU-SIK

Method of fabricating light-emitting apparatus with improved light extraction efficiency and light-emitting apparatus fabricated using the method

Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting device

Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting device

Method of fabricating light-emitting apparatus with improved light extraction efficiency and light-emitting apparatus fabricated using the method

LEE CHUNG-SUN

Semiconductor device including a stack of semiconductor chips, underfill material and molding material

SAMSUNG ELECTRONICS LTD CO

Methods of fabricating a semiconductor device having a metal gate pattern

KIM HYUN-JIN

Semiconductor package having support member

KIM KIL-SOO

Multi-channel package and electronic system including the same

LEE SEUNG-JAE

Light emitting device with improved light extraction efficiency