Inventor

TAKEUCHI MISAICHI

JP3 patents

⚠️ This page may combine multiple inventors who share the name “TAKEUCHI MISAICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

RIKEN

1 patent

US6530991B2Mar 11, 2003

Method for the formation of semiconductor layer

RIKEN33 citations90

SAMSUNG ELECTRONICS CO LTD

1 patent

US9899565B2Feb 20, 2018

Method of manufacturing semiconductor substrate including separating two semiconductor layers from a growth substrate

SAMSUNG ELECTRONICS CO LTD2 citations72

UETA YOSHIHIRO

1 patent

US8698168B2Apr 15, 2014

Semiconductor device having aluminum nitride layer with void formed therein

UETA YOSHIHIRO5 citations66