Inventor
YE ZHENG JOHN
US32 patents
⚠️ This page may combine multiple inventors who share the name “YE ZHENG JOHN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
30 patentsUS10950477B2Mar 16, 2021
Ceramic heater and esc with enhanced wafer edge performance
APPLIED MATERIALS INC280 citations99
US11587766B2Feb 21, 2023
Symmetric VHF source for a plasma reactor
APPLIED MATERIALS INC4 citations86
US9824862B2Nov 21, 2017
Symmetric VHF source for a plasma reactor
APPLIED MATERIALS INC4 citations84
US10403535B2Sep 3, 2019
Method and apparatus of processing wafers with compressive or tensile stress at elevated temperatures in a plasma enhanced chemical vapor deposition system
APPLIED MATERIALS INC11 citations83
US9610591B2Apr 4, 2017
Showerhead having a detachable gas distribution plate
APPLIED MATERIALS INC8 citations83
US11956883B2Apr 9, 2024
Methods and apparatus for controlling RF parameters at multiple frequencies
APPLIED MATERIALS INC3 citations73
US11043361B2Jun 22, 2021
Symmetric VHF source for a plasma reactor
APPLIED MATERIALS INC3 citations73
US10125422B2Nov 13, 2018
High impedance RF filter for heater with impedance tuning device
APPLIED MATERIALS INC4 citations73
US9305749B2Apr 5, 2016
Methods of directing magnetic fields in a plasma source, and associated systems
APPLIED MATERIALS INC3 citations73
US11130142B2Sep 28, 2021
Showerhead having a detachable gas distribution plate
APPLIED MATERIALS INC1 citations72
US10625277B2Apr 21, 2020
Showerhead having a detachable gas distribution plate
APPLIED MATERIALS INC2 citations72
US10580623B2Mar 3, 2020
Plasma processing using multiple radio frequency power feeds for improved uniformity
APPLIED MATERIALS INC3 citations72
US11570879B2Jan 31, 2023
Methods and apparatus for controlling RF parameters at multiple frequencies
APPLIED MATERIALS INC3 citations71
US11501993B2Nov 15, 2022
Semiconductor substrate supports with improved high temperature chucking
APPLIED MATERIALS INC2 citations71
US10879041B2Dec 29, 2020
Method and apparatus of achieving high input impedance without using ferrite materials for RF filter applications in plasma chambers
APPLIED MATERIALS INC4 citations71
US10100408B2Oct 16, 2018
Edge hump reduction faceplate by plasma modulation
APPLIED MATERIALS INC6 citations71
US12080516B2Sep 3, 2024
High density plasma enhanced process chamber
APPLIED MATERIALS INC0 citations62
US11935724B2Mar 19, 2024
Symmetric VHF source for a plasma reactor
APPLIED MATERIALS INC0 citations62
US11276562B2Mar 15, 2022
Plasma processing using multiple radio frequency power feeds for improved uniformity
APPLIED MATERIALS INC0 citations62
US10930475B2Feb 23, 2021
Graded in-situ charge trapping layers to enable electrostatic chucking and excellent particle performance for boron-doped carbon films
APPLIED MATERIALS INC0 citations62
US10663491B2May 26, 2020
Voltage-current probe for measuring radio-frequency electrical power in a high-temperature environment and method of calibrating the same
APPLIED MATERIALS INC1 citations62
US10450653B2Oct 22, 2019
High impedance RF filter for heater with impedance tuning device
APPLIED MATERIALS INC1 citations62
US11189517B2Nov 30, 2021
RF electrostatic chuck filter circuit
APPLIED MATERIALS INC0 citations61
US10923334B2Feb 16, 2021
Selective deposition of hardmask
APPLIED MATERIALS INC0 citations60
US11569072B2Jan 31, 2023
RF grounding configuration for pedestals
APPLIED MATERIALS INC0 citations59
US10325800B2Jun 18, 2019
High temperature electrostatic chucking with dielectric constant engineered in-situ charge trap materials
APPLIED MATERIALS INC1 citations59
US11776835B2Oct 3, 2023
Power supply signal conditioning for an electrostatic chuck
APPLIED MATERIALS INC0 citations58
US10128088B2Nov 13, 2018
Graded in-situ charge trapping layers to enable electrostatic chucking and excellent particle performance for boron-doped carbon films
APPLIED MATERIALS INC0 citations52
US12191115B2Jan 7, 2025
Dual RF for controllable film deposition
APPLIED MATERIALS INC0 citations50
US12394606B2Aug 19, 2025
Impedance control of local areas of a substrate during plasma deposition thereon in a large PECVD chamber
APPLIED MATERIALS INC0 citations44