P

Inventor

JANG BYONG-HYUN

KR11 patents
⚠️ This page may combine multiple inventors who share the name “JANG BYONG-HYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

4 patents
US9130054B2Sep 8, 2015

Semiconductor memory devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD29 citations93
US9653565B2May 16, 2017

Semiconductor devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD13 citations82
US10103170B2Oct 16, 2018

Semiconductor device having a vertical pillar connected to the substrate

SAMSUNG ELECTRONICS CO LTD2 citations72
US10109747B2Oct 23, 2018

Semiconductor memory devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations51

NAM PHIL-OUK

3 patents
US9324730B2Apr 26, 2016

Vertical memory devices and methods of manufacturing the same

NAM PHIL-OUK26 citations93
US8987805B2Mar 24, 2015

Vertical type semiconductor devices including oxidation target layers

NAM PHIL-OUK25 citations92
US9082659B1Jul 14, 2015

Methods of forming vertical type semiconductor devices including oxidation target layers

NAM PHIL-OUK1 citations51

JANG BYONG-HYUN

2 patents
US9431414B2Aug 30, 2016

Vertical memory devices and methods of manufacturing the same

JANG BYONG-HYUN79 citations96
US8697498B2Apr 15, 2014

Methods of manufacturing three dimensional semiconductor memory devices using sub-plates

JANG BYONG-HYUN18 citations82

CHOI EUN YEOUNG

1 patent
US10559584B2Feb 11, 2020

Semiconductor device including a dielectric layer

CHOI EUN YEOUNG3 citations69

YUN JUMI

1 patent
US9397114B2Jul 19, 2016

Methods of fabricating three-dimensional semiconductor memory devices

YUN JUMI5 citations66