Inventor
GOPAL VIDYUT
US39 patents
⚠️ This page may combine multiple inventors who share the name “GOPAL VIDYUT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTERMOLECULAR INC
18 patentsUS8658511B1Feb 25, 2014
Etching resistive switching and electrode layers
INTERMOLECULAR INC26 citations90
US8913418B2Dec 16, 2014
Confined defect profiling within resistive random memory access cells
INTERMOLECULAR INC8 citations84
US8735217B2May 27, 2014
Multifunctional electrode
INTERMOLECULAR INC4 citations84
US8883557B1Nov 11, 2014
Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition
INTERMOLECULAR INC14 citations83
US9246096B2Jan 26, 2016
Atomic layer deposition of metal oxides for memory applications
INTERMOLECULAR INC3 citations73
US8912518B2Dec 16, 2014
Resistive random access memory cells having doped current limiting layers
INTERMOLECULAR INC4 citations73
US8906736B1Dec 9, 2014
Multifunctional electrode
INTERMOLECULAR INC1 citations63
US8883655B2Nov 11, 2014
Atomic layer deposition of metal oxide materials for memory applications
INTERMOLECULAR INC2 citations63
US9444047B2Sep 13, 2016
Embedded nonvolatile memory elements having resistive switching characteristics
INTERMOLECULAR INC1 citations52
US9269896B2Feb 23, 2016
Confined defect profiling within resistive random memory access cells
INTERMOLECULAR INC0 citations52
US9130165B2Sep 8, 2015
Atomic layer deposition of metal oxide materials for memory applications
INTERMOLECULAR INC0 citations52
US9087978B1Jul 21, 2015
Transition metal oxide bilayers
INTERMOLECULAR INC0 citations52
US9006026B2Apr 14, 2015
Atomic layer deposition of metal oxides for memory applications
INTERMOLECULAR INC0 citations52
US8987697B2Mar 24, 2015
Transition metal oxide bilayers
INTERMOLECULAR INC0 citations52
US8859328B2Oct 14, 2014
Multifunctional electrode
INTERMOLECULAR INC0 citations52
US8704203B2Apr 22, 2014
Transition metal oxide bilayers
INTERMOLECULAR INC0 citations52
US9543516B2Jan 10, 2017
Method for forming a doped metal oxide for use in resistive switching memory elements
INTERMOLECULAR INC0 citations51
US9065040B2Jun 23, 2015
Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition
INTERMOLECULAR INC0 citations51
APPLIED MATERIALS INC
5 patentsUS7067439B2Jun 27, 2006
ALD metal oxide deposition process using direct oxidation
APPLIED MATERIALS INC48 citations94
US6887732B2May 3, 2005
Microstructure devices, methods of forming a microstructure device and a method of forming a MEMS device
APPLIED MATERIALS INC21 citations93
US7569501B2Aug 4, 2009
ALD metal oxide deposition process using direct oxidation
APPLIED MATERIALS INC17 citations91
US6666979B2Dec 23, 2003
Dry etch release of MEMS structures
APPLIED MATERIALS INC45 citations91
US7569500B2Aug 4, 2009
ALD metal oxide deposition process using direct oxidation
APPLIED MATERIALS INC2 citations61
WANG YUN
4 patentsUS8288297B1Oct 16, 2012
Atomic layer deposition of metal oxide materials for memory applications
WANG YUN23 citations91
US8787066B2Jul 22, 2014
Method for forming resistive switching memory elements with improved switching behavior
WANG YUN8 citations84
US8466446B2Jun 18, 2013
Atomic layer deposition of metal oxide materials for memory applications
WANG YUN5 citations82
US8546275B2Oct 1, 2013
Atomic layer deposition of hafnium and zirconium oxides for memory applications
WANG YUN3 citations63
SPANSION LLC
3 patentsUS7972962B2Jul 5, 2011
Planarization method using hybrid oxide and polysilicon CMP
SPANSION LLC4 citations62
US7829464B2Nov 9, 2010
Planarization method using hybrid oxide and polysilicon CMP
SPANSION LLC3 citations62
US7696094B2Apr 13, 2010
Method for improved planarization in semiconductor devices
SPANSION LLC6 citations62