Inventor

WATANABE YUKIHIKO

JP55 patents

⚠️ This page may combine multiple inventors who share the name “WATANABE YUKIHIKO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WATANABE YUKIHIKO

DENSO CORP

Silicon carbide semiconductor device and manufacturing method therefor

Silicon carbide semiconductor device

Silicon carbide semiconductor device and method for producing the same

Silicon carbide semiconductor device and method of manufacturing the same

Silicon carbide semiconductor device

Silicon carbide semiconductor device and method for producing the same

Silicon carbide semiconductor device and method for producing the same

Switching element

Silicon carbide semiconductor device

Silicon carbide semiconductor device and method for manufacturing the same

Semiconductor device and manufacturing method of semiconductor device

Silicon carbide semiconductor device including conductivity layer in trench

Silicon carbide semiconductor device and method for producing the same

Switching element

Semiconductor device with surface and deep guard rings

Semiconductor device

Nonvolatile semiconductor memory device and method of erasing and programming the same

Silicon carbide semiconductor device and manufacturing method therefor

Silicon carbide semiconductor device and manufacturing method therefor

TOYOTA MOTOR CO LTD

Semiconductor device

Switching device

Field effect transistor incorporating a Schottky diode

Semiconductor device having element region and termination region surrounding element region

Semiconductor device

Manufacturing method of a semiconductor device

Switching device

Schottky barrier diode and method for manufacturing the same

SiC-MOSFET and method of manufacturing the same

Insulated gate switching device and method for manufacturing the same

Insulated gate bipolar transistor with improved on/off resistance

MIYAHARA SHINICHIRO

Silicon carbide semiconductor device

SiC semiconductor device

Manufacturing method of silicon carbide semiconductor device

FUJIWARA HIROKAZU

Switching element and manufacturing method thereof

Semiconductor device manufacturing method

SAITO JUN

Semiconductor device with front and rear surface electrodes on a substrate having element and circumferential regions, an insulating gate type switching element in the element region being configured to switch between the front and rear surface electrodes

Insulated gate type semiconductor device having floating regions at bottom of trenches in cell region and circumferential region and manufacturing method thereof

WATANABE HIROKI

Silicon carbide semiconductor device

Manufacturing method of silicon carbide single crystal

ENDO TAKESHI

Method of manufacturing silicon carbide semiconductor device

Semiconductor device making method

YAMAMOTO TAKEO

Silicon carbide semiconductor device with Schottky barrier diode and method of manufacturing the same

SiC semiconductor device having Schottky barrier diode and method for manufacturing the same

MIMURA TOMOHIRO

Silicon carbide semiconductor device and manufacturing method of the same

SUZUKI NAOHIRO

Silicon carbide semiconductor device and method of manufacturing the same

TOYODA AUTOMATIC LOOM WORKS

Static induction type semiconductor device with multiple source contact regions

YAMAMOTO KENSAKU

Semiconductor device including cell region and peripheral region having high breakdown voltage structure

WATANABE YUKIHIKO

Semiconductor device and manufacturing method thereof

TOYOTA CHUO KENKYUSHO KK

Method of manufacturing semiconductor device

TAKAYA HIDEFUMI

Semiconductor device and method of manufacturing semiconductor device