Inventor

HOLLAND JOHN PATRICK

US45 patents

⚠️ This page may combine multiple inventors who share the name “HOLLAND JOHN PATRICK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HOLLAND JOHN PATRICK

LAM RES CORP

Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring

Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring

Ion energy control by RF pulse shape

Method of and apparatus for electronically controlling r.f. energy supplied to a vacuum plasma processor and memory for same

Vacuum plasma processor having coil with minimum magnetic field in its center

Method of and apparatus for igniting a plasma in an r.f. plasma processor

Impedance matching circuit for operation with a kilohertz RF generator and a megahertz RF generator to control plasma processes

Inductively coupled source for deriving substantially uniform plasma flux

Systems and methods for tailoring ion energy distribution function by odd harmonic mixing

Uniformity control circuit for use within an impedance matching circuit

Inductively coupled planar source for substantially uniform plasma flux

Vacuum plasma processor having coil with small magnetic field in its center

Apparatus for controlling matching network of a vacuum plasma processor and memory for same

Plasma processor with coil responsive to variable amplitude rf envelope

Vacuum plasma processor having coil with intermediate portion coupling lower magnetic flux density to plasma than center and peripheral portions of the coil

Vacuum plasma processor having coil with added conducting segments to its peripheral part

Systems and methods for achieving a pre-determined factor associated with an edge region within a plasma chamber by synchronizing main and edge RF generators

Systems and methods for achieving a pre-determined factor associated with an edge region within a plasma chamber by synchronizing main and edge RF generators

Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring

Systems and methods for tailoring ion energy distribution function by odd harmonic mixing

Multi regime plasma wafer processing to increase directionality of ions

Impedance matching circuit for operation with a kilohertz RF generator and a megahertz RF generator to control plasma processes

Low frequency RF generator and associated electrostatic chuck

Electrostatic Chuck design for cooling-gas light-up prevention

Electrostatic chuck with features for preventing electrical arcing and light-up and improving process uniformity

Electrostatic chuck design for cooling-gas light-up prevention

Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring

Ion energy control by RF pulse shape

Multi regime plasma wafer processing to increase directionality of ions

Uniformity control circuit for use within an impedance matching circuit

Electrostatic chuck design for cooling-gas light-up prevention

Chamber with vertical support stem for symmetric conductance and RF delivery

Chamber with vertical support stem for symmetric conductance and RF delivery

Chamber with vertical support stem for symmetric conductance and RF delivery

Electrostatic chucks with coolant gas zones and corresponding groove and monopolar electrostatic clamping electrode patterns

Systems and methods for controlling a plasma sheath characteristic

Electrostatic chucks with coolant gas zones and corresponding groove and monopolar electrostatic clamping electrode patterns

Electrostatic chucks with coolant gas zones and corresponding groove and monopolar electrostatic clamping electrode patterns

Semiconductor processing system having multiple decoupled plasma sources

Methods and systems for managing byproduct material accumulation during plasma-based semiconductor wafer fabrication process

HOLLAND JOHN PATRICK

Semiconductor processing system having multiple decoupled plasma sources

E-beam enhanced decoupled source for semiconductor processing

E-beam enhanced decoupled source for semiconductor processing

Semiconductor processing system having multiple decoupled plasma sources

KOSHIISHI AKIRA

Semiconductor processing system with source for decoupled ion and radical control