Inventor
VENTZEK PETER L G
US40 patents
⚠️ This page may combine multiple inventors who share the name “VENTZEK PETER L G”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
20 patentsUS10991554B2Apr 27, 2021
Plasma processing system with synchronized signal modulation
TOKYO ELECTRON LTD49 citations94
US10249498B2Apr 2, 2019
Method for using heated substrates for process chemistry control
TOKYO ELECTRON LTD41 citations94
US9768033B2Sep 19, 2017
Methods for high precision etching of substrates
TOKYO ELECTRON LTD29 citations94
US8889534B1Nov 18, 2014
Solid state source introduction of dopants and additives for a plasma doping process
TOKYO ELECTRON LTD43 citations93
US9396900B2Jul 19, 2016
Radio frequency (RF) power coupling system utilizing multiple RF power coupling elements for control of plasma properties
TOKYO ELECTRON LTD10 citations84
US7449414B2Nov 11, 2008
Method of treating a mask layer prior to performing an etching process
TOKYO ELECTRON LTD7 citations74
US10483127B2Nov 19, 2019
Methods for high precision plasma etching of substrates
TOKYO ELECTRON LTD2 citations73
US10211065B2Feb 19, 2019
Methods for high precision plasma etching of substrates
TOKYO ELECTRON LTD3 citations73
US9658106B2May 23, 2017
Plasma processing apparatus and measurement method
TOKYO ELECTRON LTD4 citations73
US10002744B2Jun 19, 2018
System and method for controlling plasma density
TOKYO ELECTRON LTD5 citations72
US7642193B2Jan 5, 2010
Method of treating a mask layer prior to performing an etching process
TOKYO ELECTRON LTD4 citations63
US7572386B2Aug 11, 2009
Method of treating a mask layer prior to performing an etching process
TOKYO ELECTRON LTD4 citations63
US7763551B2Jul 27, 2010
RLSA CVD deposition control using halogen gas for hydrogen scavenging
TOKYO ELECTRON LTD2 citations62
US11551909B2Jan 10, 2023
Ultra-localized and plasma uniformity control in a plasma processing system
TOKYO ELECTRON LTD1 citations61
US9659754B2May 23, 2017
Plasma processing apparatus and plasma processing method
TOKYO ELECTRON LTD1 citations52
US9455133B2Sep 27, 2016
Hollow cathode device and method for using the device to control the uniformity of a plasma process
TOKYO ELECTRON LTD0 citations52
US11037798B2Jun 15, 2021
Self-limiting cyclic etch method for carbon-based films
TOKYO ELECTRON LTD0 citations46
US9530621B2Dec 27, 2016
Integrated induction coil and microwave antenna as an all-planar source
TOKYO ELECTRON LTD0 citations42
US9728416B2Aug 8, 2017
Plasma tuning rods in microwave resonator plasma sources
TOKYO ELECTRON LTD0 citations38
US9396955B2Jul 19, 2016
Plasma tuning rods in microwave resonator processing systems
TOKYO ELECTRON LTD0 citations38
FREESCALE SEMICONDUCTOR INC
9 patentsUS7592248B2Sep 22, 2009
Method of forming semiconductor device having nanotube structures
FREESCALE SEMICONDUCTOR INC34 citations93
US7579282B2Aug 25, 2009
Method for removing metal foot during high-k dielectric/metal gate etching
FREESCALE SEMICONDUCTOR INC11 citations84
US7335602B2Feb 26, 2008
Charge-free layer by layer etching of dielectrics
FREESCALE SEMICONDUCTOR INC12 citations84
US7772584B2Aug 10, 2010
Laterally grown nanotubes and method of formation
FREESCALE SEMICONDUCTOR INC5 citations74
US7371677B2May 13, 2008
Laterally grown nanotubes and method of formation
FREESCALE SEMICONDUCTOR INC5 citations74
US6969568B2Nov 29, 2005
Method for etching a quartz layer in a photoresistless semiconductor mask
FREESCALE SEMICONDUCTOR INC4 citations62
US7279433B2Oct 9, 2007
Deposition and patterning of boron nitride nanotube ILD
FREESCALE SEMICONDUCTOR INC3 citations57
US7751177B2Jul 6, 2010
Thin-film capacitor with a field modification layer
FREESCALE SEMICONDUCTOR INC0 citations51
US7534693B2May 19, 2009
Thin-film capacitor with a field modification layer and methods for forming the same
FREESCALE SEMICONDUCTOR INC0 citations51
HOLLAND JOHN PATRICK
4 patentsUS8900402B2Dec 2, 2014
Semiconductor processing system having multiple decoupled plasma sources
HOLLAND JOHN PATRICK38 citations93
US9177756B2Nov 3, 2015
E-beam enhanced decoupled source for semiconductor processing
HOLLAND JOHN PATRICK23 citations92
US9111728B2Aug 18, 2015
E-beam enhanced decoupled source for semiconductor processing
HOLLAND JOHN PATRICK8 citations83
US8900403B2Dec 2, 2014
Semiconductor processing system having multiple decoupled plasma sources
HOLLAND JOHN PATRICK7 citations83