Inventor

DORHOUT JUSTIN B

US74 patents

⚠️ This page may combine multiple inventors who share the name “DORHOUT JUSTIN B”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

DORHOUT JUSTIN B

MICRON TECHNOLOGY INC

Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material

Microelectronic devices including staircase structures, and related memory devices and electronic systems

Methods of forming an array of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stack

Methods used in forming an array of elevationally-extending strings of memory cells, methods of forming an array of elevationally-extending strings of memory cells, and methods of forming an array of vertical strings of memory cells

Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor

Integrated structures comprising channel material extending into source material

Memory arrays, and methods of forming memory arrays

Methods of forming integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material

Integrated assemblies and methods of forming integrated assemblies

Vertical memory blocks and related devices and methods

Memory arrays and methods used in forming a memory array comprising strings of memory cells

Method of forming an array of elevationally-extending strings of programmable memory cells and method of forming an array of elevationally-extending strings of memory cells

Microelectronic devices including staircase structures, and related memory devices and electronic systems

Integrated assemblies having anchoring structures proximate stacked memory cells

Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor

Integrated structures

Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material

Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems

Integrated assemblies having conductive posts extending through stacks of alternating materials

Integrated assemblies having anchoring structures proximate stacked memory cells, and methods of forming integrated assemblies

Microelectronic devices and related methods

Integrated assemblies and methods of forming integrated assemblies

Methods used in forming a memory array comprising strings of memory cells

Memory arrays, and methods of forming memory arrays

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

Device, a method used in forming a circuit structure, a method used in forming an array of elevationally-extending transistors and a circuit structure adjacent thereto

Memory arrays and methods used in forming a memory array comprising strings of memory cells

Integrated structures

Memory arrays and methods used in forming a memory array comprising strings of memory cells

Integrated assemblies having conductive posts extending through stacks of alternating materials

Integrated assemblies having anchoring structures proximate stacked memory cells, and methods of forming integrated assemblies

Integrated structures

Methods of forming integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material

Integrated structures

Integrated assemblies and methods of forming integrated assemblies

Integrated assemblies and methods of forming integrated assemblies

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

Microelectronic devices including support pillar structures, and related memory devices

Methods of forming electronic devices with channel openings or pillars extending through a tier stack

Memory arrays and methods used in forming a memory array and conductive through-array-vias (TAVs)

Methods of forming microelectronic devices, and related memory devices, and electronic systems

Integrated assemblies and methods of forming integrated assemblies

Electronic devices and systems with channel openings or pillars extending through a tier stack, and methods of formation

Microelectronic devices including stair step structures, and related memory devices, electronic systems, and methods

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

Memory arrays and methods used in forming a memory array and conductive through-array-vias (TAVs)

LODESTAR LICENSING GROUP LLC

Microelectronic devices and related memory devices

Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material

Microelectronic devices and memory devices including support pillars

Microelectronic devices with pillars or openings extending through a tiered stack