Inventor

TEGEN STEFAN

DE55 patents

⚠️ This page may combine multiple inventors who share the name “TEGEN STEFAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TEGEN STEFAN

INFINEON TECHNOLOGIES DRESDEN GMBH

Method of manufacturing a semiconductor device with device separation structures

Semiconductor device with buried gate electrode structures

Method of manufacturing a semiconductor device with buried channel/body zone and semiconductor device

Power transistor

Method for manufacturing a bipolar junction transistor

Methods of manufacturing a semiconductor device with a buried doped region and a contact structure

Method for manufacturing a bipolar junction transistor

Method for processing a carrier

Semiconductor device with buried doped region and contact structure

Semiconductor component with field electrode between adjacent semiconductor fins and method for producing such a semiconductor component

Power transistor

Method for processing a carrier

Semiconductor device with device separation structures

Semiconductor device having buried gate electrode structures

Method for manufacturing a semiconductor device having silicide layers

INFINEON TECHNOLOGIES AG

Method of manufacturing a field effect transistor device with recessed channel and corner gate device

Low resistance contact in a semiconductor device

BiMOS device with a fully self-aligned emitter-silicon and method for manufacturing the same

Semiconductor having structure with openings

Method for manufacturing an integrated circuit and an integrated circuit

Contact structure for a stack DRAM storage capacitor

Memory cell array and method of manufacturing the same

Integrated circuit structure and a battery structure

Electronic structure, a battery structure, and a method for manufacturing an electronic structure

Apparatus comprising a plurality of nanowires

Method for manufacturing a plurality of nanowires

Memory device and method of manufacturing a memory device

BiMOS device with a fully self-aligned emitter-silicon and method for manufacturing the same

INFINEON TECHNOLOGIES AUSTRIA AG

Transistor device having a field plate

Transistor device having a field plate in an elongate active trench

Transistor device and method of forming a field plate in an elongate active trench of a transistor device

Semiconductor die including an edge termination structure laterally between an active area and a lateral edge region of the die

Method for forming vertical field effect transistor devices having alternating drift regions and compensation regions

Vertical field effect transistor device having alternating drift regions and compensation regions

Semiconductor power device and method of manufacturing the same

Transistor device

QIMONDA AG

Semiconductor component with MIM capacitor

Integrated circuit and methods of manufacturing the same

Method of manufacturing a transistor and memory cell array

Method for producing an integrated circuit and arrangement comprising a substrate

Memory circuit with field effect transistor and method for manufacturing a memory circuit with field effect transistor

Integrated circuit including an array of memory cells and method

INFINEON TECH DRESDEN GMBH & CO KG

Method for producing a semiconductor arrangement

Electronic circuit with a transistor device, a level shifter and a drive circuit

Electronic circuit with a transistor device and a level shifter

Semiconductor die with a power device and method of manufacturing the same

Method of manufacturing a semiconductor device

Semiconductor device having silicide layers

KASKO IGOR

Integrated circuit including an array of diodes coupled to a layer of resistance changing material

INFINEON TECHNOLOGIES AUSTRIA

Semiconductor device