Inventor
FARRELL ROBERT M
US15 patents
⚠️ This page may combine multiple inventors who share the name “FARRELL ROBERT M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNIV CALIFORNIA
7 patentsUS7480322B2Jan 20, 2009
Electrically-pumped (Ga,In,Al)N vertical-cavity surface-emitting laser
UNIV CALIFORNIA7 citations73
US11411137B2Aug 9, 2022
III-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers
UNIV CALIFORNIA2 citations68
US7839903B2Nov 23, 2010
Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers
UNIV CALIFORNIA2 citations63
US11552452B2Jan 10, 2023
Semi-polar III-nitride optoelectronic devices on m-plane substrates with miscuts less than +/− 15 degrees in the c-direction
UNIV CALIFORNIA0 citations61
US9917422B2Mar 13, 2018
Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/− 15 degrees in the C-direction
UNIV CALIFORNIA0 citations51
US10186835B2Jan 22, 2019
Monolithic integration of optically pumped III-nitride devices
UNIV CALIFORNIA0 citations41
US9356431B2May 31, 2016
High power blue-violet III-nitride semipolar laser diodes
UNIV CALIFORNIA0 citations37
GE MED SYS INFORMATION TECH
2 patentsUS6801802B2Oct 5, 2004
System and method for selecting physiological data from a plurality of physiological data sources
GE MED SYS INFORMATION TECH232 citations97
US6506163B1Jan 14, 2003
Method and system of distinguishing pressure pulses from v waves during wedge pressure measurement
GE MED SYS INFORMATION TECH14 citations82
FEEZELL DANIEL F
2 patentsFARRELL ROBERT M
2 patentsUS8795430B2Aug 5, 2014
Method of improving surface morphology of (Ga,Al,In,B)N thin films and devices grown on nonpolar or semipolar (Ga,Al,In,B)N substrates
FARRELL ROBERT M1 citations48
US8588260B2Nov 19, 2013
Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers
FARRELL ROBERT M0 citations45