Inventor
QIN SHU
US50 patents
⚠️ This page may combine multiple inventors who share the name “QIN SHU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
34 patentsUS10153190B2Dec 11, 2018
Devices, systems and methods for electrostatic force enhanced semiconductor bonding
MICRON TECHNOLOGY INC15 citations93
US7592212B2Sep 22, 2009
Methods for determining a dose of an impurity implanted in a semiconductor substrate
MICRON TECHNOLOGY INC19 citations93
US9281471B2Mar 8, 2016
Phase change memory stack with treated sidewalls
MICRON TECHNOLOGY INC14 citations92
US7737010B2Jun 15, 2010
Method of photoresist strip for plasma doping process of semiconductor manufacturing
MICRON TECHNOLOGY INC22 citations92
US10224479B2Mar 5, 2019
Phase change memory stack with treated sidewalls
MICRON TECHNOLOGY INC4 citations84
US10177198B2Jan 8, 2019
Phase change memory stack with treated sidewalls
MICRON TECHNOLOGY INC6 citations84
US10079340B2Sep 18, 2018
Phase change memory stack with treated sidewalls
MICRON TECHNOLOGY INC6 citations84
US9673256B2Jun 6, 2017
Phase change memory stack with treated sidewalls
MICRON TECHNOLOGY INC9 citations84
US9306159B2Apr 5, 2016
Phase change memory stack with treated sidewalls
MICRON TECHNOLOGY INC10 citations84
US8981334B1Mar 17, 2015
Memory cells having regions containing one or both of carbon and boron
MICRON TECHNOLOGY INC10 citations84
US9093367B2Jul 28, 2015
Methods of forming doped regions in semiconductor substrates
MICRON TECHNOLOGY INC11 citations82
US7476556B2Jan 13, 2009
Systems and methods for plasma processing of microfeature workpieces
MICRON TECHNOLOGY INC5 citations74
US7235493B2Jun 26, 2007
Low-k dielectric process for multilevel interconnection using mircocavity engineering during electric circuit manufacture
MICRON TECHNOLOGY INC9 citations74
US11114328B2Sep 7, 2021
Devices, systems and methods for electrostatic force enhanced semiconductor bonding
MICRON TECHNOLOGY INC1 citations73
US10720574B2Jul 21, 2020
Phase change memory stack with treated sidewalls
MICRON TECHNOLOGY INC1 citations73
US10546895B2Jan 28, 2020
Phase change memory stack with treated sidewalls
MICRON TECHNOLOGY INC2 citations73
US12040211B2Jul 16, 2024
Devices, systems and methods for electrostatic force enhanced semiconductor bonding
MICRON TECHNOLOGY INC0 citations63
US11658033B2May 23, 2023
Methods of forming assemblies having heavily doped regions
MICRON TECHNOLOGY INC0 citations63
US11574834B2Feb 7, 2023
Devices, systems and methods for electrostatic force enhanced semiconductor bonding
MICRON TECHNOLOGY INC0 citations63
US9786475B2Oct 10, 2017
Systems and methods for plasma processing of microfeature workpieces
MICRON TECHNOLOGY INC1 citations63
US9385317B2Jul 5, 2016
Memory cells and methods of forming memory cells
MICRON TECHNOLOGY INC1 citations63
US9136282B2Sep 15, 2015
Memories and methods of forming thin-film transistors using hydrogen plasma doping
MICRON TECHNOLOGY INC3 citations63
US8940592B2Jan 27, 2015
Memories and methods of forming thin-film transistors using hydrogen plasma doping
MICRON TECHNOLOGY INC2 citations63
US7935618B2May 3, 2011
Sputtering-less ultra-low energy ion implantation
MICRON TECHNOLOGY INC3 citations63
US8497194B2Jul 30, 2013
Methods of forming doped regions in semiconductor substrates
MICRON TECHNOLOGY INC1 citations61
US12040182B2Jul 16, 2024
Plasma doping of gap fill materials
MICRON TECHNOLOGY INC0 citations56
US11508573B2Nov 22, 2022
Plasma doping of gap fill materials
MICRON TECHNOLOGY INC1 citations56
US10879071B2Dec 29, 2020
Methods of forming assemblies including semiconductor material with heavily-doped and lightly-doped regions
MICRON TECHNOLOGY INC0 citations52
US10256098B2Apr 9, 2019
Integrated assemblies containing germanium
MICRON TECHNOLOGY INC0 citations52
US9530842B2Dec 27, 2016
Semiconductor devices
MICRON TECHNOLOGY INC0 citations52
US9496495B2Nov 15, 2016
Memory cells and methods of forming memory cells
MICRON TECHNOLOGY INC0 citations52
US9257646B2Feb 9, 2016
Methods of forming memory cells having regions containing one or both of carbon and boron
MICRON TECHNOLOGY INC0 citations52
US8975603B2Mar 10, 2015
Systems and methods for plasma doping microfeature workpieces
MICRON TECHNOLOGY INC1 citations52
US8822877B2Sep 2, 2014
Rapid thermal processing systems and methods for treating microelectronic substrates
MICRON TECHNOLOGY INC0 citations52
QIN SHU
7 patentsUS8642135B2Feb 4, 2014
Systems and methods for plasma doping microfeature workpieces
QIN SHU7 citations83
US8324088B2Dec 4, 2012
Sputtering-less ultra-low energy ion implantation
QIN SHU2 citations62
US8709927B2Apr 29, 2014
Methods of implanting dopant ions
QIN SHU0 citations51
US8671879B2Mar 18, 2014
Systems and methods for plasma processing of microfeature workpieces
QIN SHU0 citations51
US8524572B2Sep 3, 2013
Methods of processing units comprising crystalline materials, and methods of forming semiconductor-on-insulator constructions
QIN SHU1 citations51
US8426763B2Apr 23, 2013
Rapid thermal processing systems and methods for treating microelectronic substrates
QIN SHU0 citations51
US8293659B2Oct 23, 2012
Method for fabricating dielectric layer with improved insulating properties
QIN SHU0 citations51
AXCELIS TECH INC
5 patentsUS7072166B2Jul 4, 2006
Clamping and de-clamping semiconductor wafers on a J-R electrostatic chuck having a micromachined surface by using force delay in applying a single-phase square wave AC clamping voltage
AXCELIS TECH INC19 citations92
US6946403B2Sep 20, 2005
Method of making a MEMS electrostatic chuck
AXCELIS TECH INC32 citations91
US7072165B2Jul 4, 2006
MEMS based multi-polar electrostatic chuck
AXCELIS TECH INC11 citations84
US6947274B2Sep 20, 2005
Clamping and de-clamping semiconductor wafers on an electrostatic chuck using wafer inertial confinement by applying a single-phase square wave AC clamping voltage
AXCELIS TECH INC11 citations74
US6905984B2Jun 14, 2005
MEMS based contact conductivity electrostatic chuck
AXCELIS TECH INC11 citations72
UNIV NORTHEASTERN
2 patentsUS5883016AMar 16, 1999
Apparatus and method for hydrogenating polysilicon thin film transistors by plasma immersion ion implantation
UNIV NORTHEASTERN28 citations93
US5508227AApr 16, 1996
Plasma ion implantation hydrogenation process utilizing voltage pulse applied to substrate
UNIV NORTHEASTERN45 citations93