Inventor
HAASE ROBERT
US31 patents
⚠️ This page may combine multiple inventors who share the name “HAASE ROBERT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AUSTRIA AG
18 patentsUS10573742B1Feb 25, 2020
Oxygen inserted Si-layers in vertical trench power devices
INFINEON TECHNOLOGIES AUSTRIA AG11 citations85
US10580888B1Mar 3, 2020
Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devices
INFINEON TECHNOLOGIES AUSTRIA AG7 citations84
US10510836B1Dec 17, 2019
Gate trench device with oxygen inserted si-layers
INFINEON TECHNOLOGIES AUSTRIA AG13 citations84
US9812535B1Nov 7, 2017
Method for manufacturing a semiconductor device and power semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG7 citations83
US11031466B2Jun 8, 2021
Method of forming oxygen inserted Si-layers in power semiconductor devices
INFINEON TECHNOLOGIES AUSTRIA AG2 citations73
US10861966B2Dec 8, 2020
Vertical trench power devices with oxygen inserted Si-layers
INFINEON TECHNOLOGIES AUSTRIA AG3 citations73
US10741638B2Aug 11, 2020
Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devices
INFINEON TECHNOLOGIES AUSTRIA AG4 citations73
US12199102B2Jan 14, 2025
Isolation structure for separating different transistor regions on the same semiconductor die
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US11545545B2Jan 3, 2023
Superjunction device with oxygen inserted Si-layers
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US12575176B2Mar 10, 2026
Semiconductor device and method of fabricating a semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations58
US12550422B2Feb 10, 2026
Semiconductor device and method of fabricating a semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations58
US12159933B2Dec 3, 2024
Semiconductor device with semiconductor mesas between adjacent gate trenches
INFINEON TECHNOLOGIES AUSTRIA AG0 citations57
US11777026B2Oct 3, 2023
Power semiconductor device having low-k dielectric gaps between adjacent metal contacts
INFINEON TECHNOLOGIES AUSTRIA AG0 citations57
US10991812B2Apr 27, 2021
Transistor device with a rectifier element between a field electrode and a source electrode
INFINEON TECHNOLOGIES AUSTRIA AG0 citations52
US10868172B2Dec 15, 2020
Vertical power devices with oxygen inserted Si-layers
INFINEON TECHNOLOGIES AUSTRIA AG0 citations52
US10790353B2Sep 29, 2020
Semiconductor device with superjunction and oxygen inserted Si-layers
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US10236352B2Mar 19, 2019
Method for manufacturing a semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US11217690B2Jan 4, 2022
Trench field electrode termination structure for transistor devices
INFINEON TECHNOLOGIES AUSTRIA AG0 citations50
INFINEON TECHNOLOGIES AMERICAS CORP
5 patentsUS9620583B2Apr 11, 2017
Power semiconductor device with source trench and termination trench implants
INFINEON TECHNOLOGIES AMERICAS CORP13 citations82
US9991347B2Jun 5, 2018
Semiconductor device having a cavity
INFINEON TECHNOLOGIES AMERICAS CORP2 citations72
US9691864B1Jun 27, 2017
Semiconductor device having a cavity and method for manufacturing thereof
INFINEON TECHNOLOGIES AMERICAS CORP5 citations72
US9627328B2Apr 18, 2017
Semiconductor structure having integrated snubber resistance
INFINEON TECHNOLOGIES AMERICAS CORP2 citations71
US9966464B2May 8, 2018
Method of forming a semiconductor structure having integrated snubber resistance
INFINEON TECHNOLOGIES AMERICAS CORP0 citations50
HARMAN INT IND
4 patentsUS12155734B2Nov 26, 2024
Universal software communication bus
HARMAN INT IND0 citations50
US11838375B2Dec 5, 2023
Universal software communication bus
HARMAN INT IND0 citations50
US11341189B2May 24, 2022
Multi-character string search engine for in-vehicle information system
HARMAN INT IND0 citations42
US9418397B2Aug 16, 2016
Start-up processing task distribution among processing units
HARMAN INT IND0 citations39