Inventor

LEOMANT SYLVAIN

AT21 patents

⚠️ This page may combine multiple inventors who share the name “LEOMANT SYLVAIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LEOMANT SYLVAIN

INFINEON TECHNOLOGIES AUSTRIA AG

Oxygen inserted Si-layers in vertical trench power devices

Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devices

Gate trench device with oxygen inserted si-layers

Method of forming oxygen inserted Si-layers in power semiconductor devices

Vertical trench power devices with oxygen inserted Si-layers

Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devices

Semiconductor switch element and method of manufacturing the same

Method of producing a semiconductor device

Superjunction device with oxygen inserted Si-layers

Semiconductor device and method

Semiconductor device with different gate trenches

Semiconductor device with different gate trenches

Semiconductor device with semiconductor mesas between adjacent gate trenches

Planar gate semiconductor device with oxygen-doped Si-layers

Power semiconductor device having low-k dielectric gaps between adjacent metal contacts

Vertical power devices with oxygen inserted Si-layers

Semiconductor device with superjunction and oxygen inserted Si-layers

Systems and methods for integrating bootstrap circuit elements in power transistors and other devices

Semiconductor device comprising a first gate trench and a second gate trench

ATMEL CORP

Voltage regulator for memory

INFINEON TECHNOLOGIES AUSTRIA

Systems and methods for integrating bootstrap circuit elements in power transistors and other devices