Inventor
NAIK HARSH
US12 patents
⚠️ This page may combine multiple inventors who share the name “NAIK HARSH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AUSTRIA AG
9 patentsUS10727331B2Jul 28, 2020
Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereof
INFINEON TECHNOLOGIES AUSTRIA AG1 citations62
US12191385B2Jan 7, 2025
Semiconductor device having a current spreading region
INFINEON TECHNOLOGIES AUSTRIA AG0 citations59
US12119400B2Oct 15, 2024
Semiconductor transistor device and method of manufacturing the same
INFINEON TECHNOLOGIES AUSTRIA AG0 citations59
US11316043B2Apr 26, 2022
Semiconductor transistor device and method of manufacturing the same
INFINEON TECHNOLOGIES AUSTRIA AG0 citations59
US12575176B2Mar 10, 2026
Semiconductor device and method of fabricating a semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations58
US12550422B2Feb 10, 2026
Semiconductor device and method of fabricating a semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations58
US12159933B2Dec 3, 2024
Semiconductor device with semiconductor mesas between adjacent gate trenches
INFINEON TECHNOLOGIES AUSTRIA AG0 citations57
US11777026B2Oct 3, 2023
Power semiconductor device having low-k dielectric gaps between adjacent metal contacts
INFINEON TECHNOLOGIES AUSTRIA AG0 citations57
US10868173B2Dec 15, 2020
Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereof
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51