Inventor
MAEGUCHI KENJI
JP8 patents
⚠️ This page may combine multiple inventors who share the name “MAEGUCHI KENJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO SHIBAURA ELECTRIC CO
7 patentsUS4463492AAug 7, 1984
Method of forming a semiconductor device on insulating substrate by selective amorphosization followed by simultaneous activation and reconversion to single crystal state
TOKYO SHIBAURA ELECTRIC CO85 citations94
US4395726AJul 26, 1983
Semiconductor device of silicon on sapphire structure having FETs with different thickness polycrystalline silicon films
TOKYO SHIBAURA ELECTRIC CO49 citations91
US4447823AMay 8, 1984
SOS p--n Junction device with a thick oxide wiring insulation layer
TOKYO SHIBAURA ELECTRIC CO20 citations80
US5061983AOct 29, 1991
Semiconductor device having a metal silicide layer connecting two semiconductors
TOKYO SHIBAURA ELECTRIC CO9 citations73
US4491856AJan 1, 1985
Semiconductor device having contacting but electrically isolated semiconductor region and interconnection layer of differing conductivity types
TOKYO SHIBAURA ELECTRIC CO12 citations73
US4564583AJan 14, 1986
Method for manufacturing a semiconductor device
TOKYO SHIBAURA ELECTRIC CO16 citations72
US4498224AFeb 12, 1985
Method of manufacturing a MOSFET using accelerated ions to form an amorphous region
TOKYO SHIBAURA ELECTRIC CO17 citations72