Inventor
YASUMURA KENJI
JP7 patents
Patents
7 patentsUS5895954AApr 20, 1999
Field effect transistor with impurity concentration peak under gate electrode
MITSUBISHI ELECTRIC CORP143 citations97
US6081662AJun 27, 2000
Semiconductor device including trench isolation structure and a method of manufacturing thereof
MITSUBISHI ELECTRIC CORP44 citations92
US5623154AApr 22, 1997
Semiconductor device having triple diffusion
MITSUBISHI ELECTRIC CORP22 citations92
US6033971AMar 7, 2000
Semiconductor device having an element isolating oxide film and method of manufacturing the same
MITSUBISHI ELECTRIC CORP13 citations72
US5831323ANov 3, 1998
Semiconductor device having an element isolating oxide film and method of manufacturing the same
MITSUBISHI ELECTRIC CORP11 citations72
US6342418B1Jan 29, 2002
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP3 citations62
US5880507AMar 9, 1999
Semiconductor device with improved pn junction breakdown voltage
MITSUBISHI ELECTRIC CORP2 citations62