Inventor

LEE KWANG JIN

KR141 patents

⚠️ This page may combine multiple inventors who share the name “LEE KWANG JIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LEE KWANG JIN

SAMSUNG ELECTRONICS CO LTD

Semiconductor memory device and method for reducing cell activation during write operations

Phase change memory devices and systems, and related programming methods

Non-volatile phase-change memory device and associated program-suspend-read operation

Programmable impedance control output circuit and programmable impedance control method thereof in semiconductor device

Nonvolatile memory device, storage system having the same, and method of driving the nonvolatile memory device

Phase change random access memory and related methods of operation

Phase change random access memory device having variable drive voltage circuit

Semiconductor memory device having echo clock path

Phase change memory device and related programming method

Phase-changeable memory device and method of programming the same

Memory architecture permitting selection of storage density after fabrication of active circuitry

High speed input receiver for generating pulse signal

PRAM and method of firing memory cells

Circuits and methods for screening for defective memory cells in semiconductor memory devices

Semiconductor device having resistance based memory array, method of reading, and systems associated therewith

Variable resistance memory device and system

Semiconductor memory device and data error detection and correction method of the same

Semiconductor device and semiconductor system having the same

Nonvolatile memory device and related methods of operation

Semiconductor memory device and memory system including semiconductor memory device

Bias voltage generator and method generating bias voltage for semiconductor memory device

Phase change memory device and program method thereof

Non-volatile memory devices and systems including phase-change one-time-programmable (OTP) memory cells and related methods

Synchronous mirror delay circuit with adjustable locking range

Circuits and methods for generating internal clock signal of intermediate phase relative to external clock

Signal converting system having level converter for use in high speed semiconductor device and method therefor

Apparatus for outputting internal state of memory apparatus and memory system using the apparatus

Semiconductor memory device capable of performing high-frequency wafer test operation

Method and apparatus for a level shifter for use in a semiconductor memory device

Semiconductor device having resistance based memory array, method of reading, and systems associated therewith

Semiconductor device having resistance based memory array, method of reading and writing, and systems associated therewith

Method of testing PRAM device

Method of outputting internal information through test pin of semiconductor memory and output circuit thereof

Memory devices having crosspoint memory arrays therein with multi-level word line and bit line structures

Memory systems and electronic devices including nonvolatile memory modules

Nonvolatile memory devices including controller for operating nonvolatile memory cell array layer in memory chip in one of memory mode and storage mode

CHO WOO-YEONG

Phase change memory devices and systems, and related programming methods

Phase change memory devices and systems, and related programming methods

Method of driving multi-level variable resistive memory device and multi-level variable resistive memory device

Variable resistance memory device and system thereof

LG CHEMICAL LTD

Acrylic impact modifier prepared by multi-stage polymerization and method for preparing the same

Vinyl chloride-vinyl acetate copolymer and method of preparing the same

BAE JUN-SOO

Phase change memory devices and systems, and related programming methods

CHOI BYUNG-GIL

Variable resistance memory device and system thereof

HYUNDAI ELECTRONICS IND

Voltage controlled generator for semiconductor devices

LEE KWANG JIN

Semiconductor device having memory array, method of writing, and systems associated therewith

LEE KWANG-JIN

Semiconductor memory device and data error detection and correction method of the same

KOLON INC

Braid-reinforced composite hollow fiber membrane

SAMSUNG ELECTRONCIS CO LTD

Phase change random access memory device and related methods of operation

LEE YONG-JUN

Nonvolatile memory device comprising one-time-programmable lock bit register