Inventor

CHOI BYUNG GIL

KR73 patents

⚠️ This page may combine multiple inventors who share the name “CHOI BYUNG GIL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHOI BYUNG GIL

SAMSUNG ELECTRONICS CO LTD

Variable resistance memory device and method of manufacturing the same

Variable resistive memory

Phase-change memory device and method of writing a phase-change memory device

Programming method of controlling the amount of write current applied to phase change memory device and write driver circuit therefor

Variable resistive memory wordline switch

Phase-change memory device and method of writing a phase-change memory device

Phase-change memory device

Control of set/reset pulse in response to peripheral temperature in PRAM device

Method for programming phase-change memory array to set state and circuit of a phase-change memory device

Phase-change memory device and method that maintains the resistance of a phase-change material in a reset state within a constant resistance range

Phase change random access memory (PRAM) device

Write driver circuit for controlling a write current applied to a phase change memory based on an ambient temperature

Phase-changeable memory device and read method thereof

Multilevel nonvolatile memory device using variable resistance

Resistance-change random access memory device including memory cells connected to discharge elements

Semiconductor device having resistance based memory array, method of reading, and systems associated therewith

Nonvolatile memory device using variable resistive element

Phase change memory device and related programming method

Phase change memory devices and program methods

Phase-change random access memory device

Phase change memory device using multiprogramming method

Phase change memory device

3-D column select circuit layout in semiconductor memory devices

Redundancy circuit in semiconductor memory device having a multiblock structure

Phase change memory device and memory cell array thereof

Resistance variable memory device reducing word line voltage

Control of set/reset pulse in response to peripheral temperature in PRAM device

Phase-change memory device and method of fabricating the same

Nonvolatile memory using resistance material

Phase change random access memory and method of testing the same

Resistive memory devices using assymetrical bitline charging and discharging

Phase change memory

Semiconductor memory device using variable resistor

Variable resistive memory

Resistance variable memory device reducing word line voltage

Variable resistance memory device

Phase-change random access memory

Phase-change random access memories capable of suppressing coupling noise during read-while-write operation

Non-volatile phase-change memory device and method of reading the same

Nonvolatile memory device using variable resistive elements

CHOI BYUNG-GIL

Nonvolatile memory device and method of driving the same

Variable resistance memory device and system thereof

Multi-level nonvolatile memory device using variable resistive element

Nonvolatile memory device with temperature controlled column selection signal levels

Nonvolatile memory device using variable resistive element

Resistive memory devices using assymetrical bitline charging and discharging

Nonvolatile memory devices including variable resistive elements

CHUNG WON-RYUL

Nonvolatile memory devices having variable-resistance memory cells and methods of programming the same

CHOI BYUNG GIL

Heat treatment equipment

KIM HYE-JIN

Nonvolatile memory device using variable resistive element