Inventor

NAKAYAMA TATSUO

JP77 patents

⚠️ This page may combine multiple inventors who share the name “NAKAYAMA TATSUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NAKAYAMA TATSUO

RENESAS ELECTRONICS CORP

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device with varying thickness of insulating film between electrode and gate electrode and method of manufacturing semiconductor device

Semiconductor device

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device including a trench with a corner having plural tapered portions

Semiconductor device and a method for manufacturing a semiconductor device

Semiconductor device using a nitride semiconductor

Semiconductor device and a method for manufacturing a semiconductor device

Semiconductor device and manufacturing method of semiconductor device

Semiconductor device and manufacturing method thereof

Semiconductor device

Method of manufacturing semiconductor device with a multi-layered gate dielectric

III-V nitride semiconductor device having reduced contact resistance

Semiconductor device

Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor

Semiconductor device and a method for manufacturing a semiconductor device

Semiconductor device

Semiconductor device and manufacturing method thereof

Semiconductor device and method for manufacturing the same

NEC CORP

Semiconductor device with schottky electrode having high schottky barrier

Semiconductor device

Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitances

Hetero-junction field effect transistor having an intermediate layer

Field-effect transistor having group III nitride electrode structure

Field effect transistor

Field-effect transistor

Semiconductor device with superlattice-structured graded buffer layer and fabrication method thereof

Field effect transistor

Semiconductor device

Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate

Method of manufacturing semiconductor device with sidewall metal layers

III-nitride semiconductor field effect transistor

Semiconductor device having Schottky junction electrode

Field effect transistor

Heterojunction field effect transistor

InAlAs/InGaAs heterojunction field effect type semiconductor device

Semiconductor device

ANDO YUJI

Semiconductor device using a group III nitride-based semiconductor

Field effect transistor, method for producing the same, and electronic device

Field effect transistor with reduced gate leakage current

OKAMOTO YASUHIRO

Field effect transistor containing a group III nitride semiconductor as main component

Semiconductor device and manufacturing method of the same

Semiconductor device, field-effect transistor, and electronic device

INOUE TAKASHI

Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor

Semiconductor device and method for manufacturing the same

(unassigned)

Ratchet handle with torque adjustment

NIPPON ZEON CO

Thermoplastic rubber compositions

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

Fuel cell system and operation method having a condensed water tank open to atmosphere

Renesas Electronics Electronics

Semiconductor device

NAKAYAMA TATSUO

Semiconductor device and method of manufacturing same